Defect estimation device and method and inspection system and method

ABSTRACT

Acquired mask data of a defect portion is sent to a simulated repair circuit  300  to be simulated. The simulation of the acquired mask data  204  is returned to the mask inspection results  205  and thereafter sent to a wafer transfer simulator  400  along with a reference image at the corresponding portion. A wafer transfer image estimated by the wafer transfer simulator  400  is sent to a comparing circuit  301 . When it is determined that there is a defect in the comparing circuit  301 , the coordinates and the wafer transfer image which is a basis for the defect determination are stored as transfer image inspection results  206 . The mask inspection results  205  and the transfer image inspection result  206  are then sent to the review device  500.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Division of and claims the benefit of priorityunder 35 U.S.C. §120 from U.S. Ser. No. 13/017,641, filed Jan. 31, 2011,and claims the benefit of priority under 35 U.S.C. §119 from JapanesePatent Applications 2010-020584 filed Feb. 1, 2010 and 2010-066559 filedMar. 23, 2010, the entire contents of each of which are incorporatedherein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a defect estimation device and methodused to estimate defects of a pattern formed on an object to beinspected such as a mask, and an inspection system and inspection methodused to detect defects of a pattern formed on an object to be inspected.

2. Background Art

In recent years, as the levels of integration and capacity of largescale integrated circuits (LSIs) have increased, there has been a needto continue to reduce the width of the circuit patterns of semiconductordevices. Semiconductor devices are manufactured by a reduced projectionexposure apparatus called a “stepper” using original artwork patternswith a circuit pattern formed thereon, these are called masks orreticles (hereinafter referred to collectively as masks). Specifically,a pattern on a mask is transferred to the wafer by exposure to light,thereby forming circuits on to a wafer. Masks used to transfer such finecircuit patterns to the wafer are manufactured by electron beam writingapparatuses, which can write micropatterns. Further, effort has beenmade to develop a laser beam writing apparatus, which uses a laser beamfor writing. It should be noted that electron beam apparatuses are alsoused to directly write a circuit pattern on a wafer.

Incidentally, since the cost to manufacture LSIs is very high, anincrease in yield is required to make the manufacturing economicallyfeasible. Meanwhile, recent representative logic devices require apattern having a line width of several ten nano-meters. Major factorsthat reduce the yield include a mask containing a pattern defect and avariation in conditions of the exposure transfer. In the prior art, withthe miniaturization of an LSI pattern dimension to be formed on asemiconductor wafer, mask dimensional accuracy has been improved, by thevariation margin of process terms and conditions having been absorbed.Therefore, in the mask inspection, the dimension of the pattern defectis miniaturized, and a positional error of an extremely small pattern isrequired to be inspected. Therefore, high inspection accuracy isrequired of inspection systems for detecting defects of masks used inLSI manufacture.

One of the factors that allow miniaturization of a mask pattern is theapplication of Resolution Enhancement Technology (herein after referredto as RET). In the RET technique, an auxiliary pattern referred to as anassist pattern is disposed on the side of a main pattern, whereby theformability of the main pattern is improved. Although the auxiliarypattern is not part of a transfer image, light energy entering a regionof the main pattern is secured by the provision of the auxiliarypattern. In a mask inspection device, such a defect of the assistpattern can also be detected.

There are two known mask defect detecting methods: the die-to-dieinspection method and the die-to-database inspection method. Thedie-to-die inspection method is used when the mask to be inspected hasthereon a plurality of identical chip patterns, or a plurality of chippatterns each including an identical pattern segment. In this method,these identical chip patterns or identical pattern segments, which areto be printed to the wafer, are compared to each other. This methodpermits accurate inspection using a relatively simple systemconfiguration, since patterns on the same mask are directly compared toeach other. However, this method cannot detect a defect common to bothcompared patterns. In the die-to-database inspection method, on theother hand, an actual pattern on a mask is compared to reference datagenerated from the design pattern data that was used to manufacture themask. Thus, this method allows exact comparison of the pattern with thedesign pattern data, although the required system size is large sincethe method requires a processing system for generating a referenceimage. There is no choice but to use this inspection method when themask to be inspected has only one chip pattern to be transferred to thewafer.

In die-to-die inspection, light is emitted from a light source, and themask to be inspected is irradiated with this light through an opticalsystem. The mask is mounted on a table, and this table is moved so thatthe emitted beam of light scans the surface of the mask. Lighttransmitted through or reflected from the mask reaches an image sensor,thereby forming an image thereon. The optical image thus formed on theimage sensor is sent to a comparing unit as measurement data. Thecomparing unit compares the measurement data with reference data inaccordance with an appropriate algorithm, and if they are not identical,the mask is determined to have a defect (see Patent Document 1).

In the prior art inspection device, when it is determined that there isa defect, the optical image used as a basis for the determination andthe corresponding reference image are stored in the inspection devicealong with the coordinates of these images. When the inspection of onemask is completed, an operator visually confirms a pattern at a defectportion utilizing an optical observation system in the inspectiondevice. Then, the necessity of repair is determined. After a defect tobe repaired is discovered the mask and the information required for therepair are sent to a repair device. The information required for therepair is a cut-out portion of pattern data for use in the recognitionof coordinates in the mask, discrimination between extrusion andintrusion defects, discrimination whether to remove a light-shieldingfilm or deposit a pattern at a portion to be repaired by the repairdevice.

As described above, in the prior art inspection device, a mask patternimage obtained by imaging an optical image by an image sensor isdetermined to be correct. However, with the recent miniaturization of adevice pattern on a mask, it is difficult to distinguish a differencebetween a shape defect of a pattern and a potentially existing shapeerror of a pattern. Incidentally, defects associated with micropatternsinclude not only shape defects typified by pattern edge roughness, butalso pattern linewidth errors and pattern displacement errors, which arebecoming more and more significant due to the miniaturization of devicepatterns. Therefore, there has been a strong need to accurately controlthe dimensions of patterns, thus increasing the difficulty ofmanufacturing masks. As a result, there has been a loss in the yield ofmasks that meet the required specifications, thereby raising maskmanufacturing cost. Further, the required accuracy of a linewidth orpattern of a mask increases, whereby determination as to whether or notthere is a defect is difficult if the only comparison is betweengenerated reference data based on design pattern data and a patternimage taken by an inspection device.

In order to address this problem, a defect evaluating method has beenproposed which uses a simulation. This method simulates the image whichwould be printed from the mask to a wafer by the photolithographyapparatus and determines whether or not the pattern on the mask isdefective by inspecting the simulated image. Non-Patent Document 1 showsa method of capturing an inspected mask image by a CCD (Charge CoupledDevice), using a high-resolution optical system and a method ofobtaining a wafer aerial image by using a low-resolution optical system(see, FIG. 1). In the former method, the mask image of the inspectedpattern and the reference pattern is acquired by the high-resolutionoptical system. A wafer transfer image is estimated from the mask imagethrough the process of FIG. 2. Thereafter, the wafer transfer images arecompared with each other and defect determination is performed.Meanwhile, in the latter method, the wafer transfer image is directlycollected by an optical wafer transfer device. In these methods, animage to be transferred onto a wafer is predicted, and the defectdetermination is performed based on the image. The latter method is alsodescribed in Non-Patent Document 2 (see, FIG. 3 and the bottom of page3).

When a plurality of fractures and taper shaped defects occur in anassist pattern corresponding to a certain part of the main pattern on amask, the shape of the main pattern in an estimated wafer transfer imageshould be in such a state that a dimensional error such as constrictionof the line width occurs. That is to say, according to a determinationmethod based on a transfer image, it can be predicted that the shapedefect of a mask makes the transfer image incorrect. However, in thiscase, there is a problem that it cannot be indicated which of the defectportions in the assist pattern, that is, which of a plurality offracture portions causes the constriction of the line width in the mainpattern, or which combination of the plurality of fracture portionscauses the constriction of the line width in the main pattern.

Patent Document 2 discloses a method for simulating a lithographicdesign comprised of a number of polygons arranged in a predeterminedconfiguration. Specifically, referring to FIG. 4 of this publication, anaerial image is generated using a bitmap image available from thepolygon design database (box 126), and resist modeling or simulation isperformed using this aerial image (box 128). FIG. 7 shows a technique ofestimating a wafer pattern aerial image by simulation of an image from amask inspection device. This technique indicates whether a wafer aerialimage or a wafer image, obtained through a wafer generation process suchas reaction of photoresist by light exposure, is correct.

Further, Patent Document 3 states as follows: “In any mask inspectionsystem, the important decision to make is whether a given defect will‘print’ on the underlying photoresist in a lithography process underspecified conditions. If a mask defect does not print or have othereffect on the lithography process, then the mask with the defect canstill be used to provide acceptable lithography results. Therefore, onecan avoid the expense in time and cost of repairing and/or replacingmasks whose defects do not print.”

Patent Document 3 discloses a method of acquiring a defect area imageincluding an image of a portion of a mask and generating a simulatedimage. This simulated image includes a simulation of an image whichwould be printed on the wafer.

As described above, according to the prior art inspection device, anestimated transfer image that would be transferred to the waferincluding defects acquired by the inspection device can be generated.However, in the prior art there is no inspection device which canindicate the level of influence that a defect will have on the wafer.Furthermore, there is no inspection device that can determine whetherthe repair of a specific pattern error or repair of a combination ofpattern errors in the wafer transfer image will result in an acceptabletransfer image to the wafer. For example, when a pattern is formed onthe wafer using an exposure light source having a directivity inirradiation intensity, a irradiation direction and a mask pattern thathave been optimized, a minute pattern can be transferred onto the waferin combination with the exposure light. Estimation is then required todetermine which portion of the wafer transfer image is affected by themask shape defect using accurate simulation including a light source.

-   [Patent Document 1] Japanese laid-open Patent publication No.    2008-112178-   [Patent Document 2] Japanese laid-open Patent publication No.    2009-105430-   [Patent Document 3] Published Japanese translation of PCT    application No. 2001-516898-   [Non-Patent Document 1] Carl Hess et al. (KLA-Tencor Corporation), A    Novel Approach: High Resolution Inspection with a Wafer Plane Defect    Detection. Prof of SPIE Vol. 7028, 70281F-   [Non-Patent Document 2] Dan Ros et al. (MP-Mask Technology Center)    Qualification of Aerial Image 193 nm Inspection Tool for All Masks    and All Process Steps, Proc of SPIE Vol. Vol. 7028, 70282Q (2008)-   [Non-Patent Document 3] (H. H. Hopkins, On the di_reaction theory of    optical images, In Proc. Royal Soc. Series A., volume 217 No. 1131,    pages 408-432, 1953).-   [Non-Patent Document 4] (N. B. Cobb, A. Zakhor, M. Reihani, F.    Jahansooz, and V. N. Raghavan: Proc. SPIE 3051 (1997) 458).-   [Non-Patent Document 5] (M. Osawa, T. Yao, H. Aoyama, K. Ogino, H.    Hoshino, Y. Machida, S. Asai, and H. Arimoto, J. Vac. Sci. Technol.    B21 (2003) 2806).-   [Non-Patent Document 6] N. B Cobb, (Fast Optical and Process    Proximity Correction Algorithms for Integrated Circuit    Manufacturing) A dissertation submitted in partial satisfaction of    the requirements for the degree of Doctor Of Philosophy in    Engineering: Electrical Engineering and Computer Science in the    Graduate Division of the University of California in Berkeley,    Spring 1988 can be referred to.

The present invention has been conceived in view of the above problem.Therefore, an object of this invention is to provide a defect estimationdevice and a defect estimation method, which can estimate a defect or aplurality of defects on a mask, the influence of the defect on a wafer,and the degree of improvement by repair.

Further, an object of this invention is to provide an inspection devicewhich estimates a defect on a mask, the influence of the defect on awafer and the degree of improvement by repair, thereby indicating thelevel of influence of the mask defect itself on the wafer and theportion of the pattern on the mask to be repaired for eliminating adetected defect.

Furthermore, another object of this invention is to provide aninspection device and an inspection method, which can facilitate adefect determination processing for a mask and can perform defectdetermination processing and estimate a defect or a plurality of defectson a mask and the resultant influence on a wafer image.

Other challenges and advantages of the present invention are apparentfrom the following description.

SUMMARY OF THE INVENTION

The present invention relates to a Defect Estimation Device and Methodand an Inspection System and Method. In the first aspect, a defectestimation device comprising: an estimation part which obtains anoptical image of a pattern formed on a mask and a reference image andthen estimates from these images each pattern image that would betransferred to a substrate; a comparison part which compares the patternimages with each other and when a difference exceeds at least one of thethreshold values, determines that there is a defect; and a simulatedrepair part which simulates a repair to the optical image at a portiondetermined as defective by the comparison, wherein the simulated opticalimage is sent to the estimation part.

In another aspect of this invention, a defect estimation devicecomprising: a first estimation part which obtains an optical image of apattern formed on a mask and a reference image and estimates, from theseimages, each first pattern image of the patterns transferred to asubstrate by a lithography process; a first comparison part whichcompares the first pattern images with each other and, when a differenceexceeds at least one of the threshold values, determines that there is adefect; a simulated repair part which simulates a repair to the opticalimage at a portion determined as defective by the comparison; and asecond estimation part which estimates each second pattern image of thepatterns, transferred onto the substrate, from the reference image andthe simulated optical image, wherein in the second pattern image, thelithography process is more advanced than that in the first patternimage.

In another aspect of this invention, a defect estimation methodcomprising: obtaining an optical image of a pattern formed on a mask anda reference image, estimating from these images, each first patternimage of the patterns transferred to a substrate, and comparing thefirst pattern images with each other; simulating a repair to the opticalimage at a portion determined as defective by the comparison; andestimating, after the simulated repair, each second pattern image fromthe reference image and the simulated optical image.

In another aspect of this invention, an inspection device, whichirradiates light to a mask formed with a pattern, forming an image ofthe mask on an image sensor through an optical system, and determinesthe presence of a defect, comprising: an optical image acquisition partwhich obtains an optical image of the mask from the image sensor; anestimation part which estimates each pattern image of the patterns,transferred to a substrate, from a reference image as a reference of thedetermination and the optical image; a comparison part which comparesthe pattern images with each other and, when a difference exceeds atleast one of the threshold values, determines that there is a defect;and a simulated repair part which simulates a repair to the opticalimage at a portion determined as defective by the comparison, whereinthe simulated optical image is sent to the estimation part.

In another aspect of this invention, an inspection device, whichirradiates light to a mask formed with a pattern, forming an image ofthe mask on an image sensor through an optical system, and determinesthe presence of a defect, comprising:

an optical image acquisition part which obtains an optical image of themask from the image sensor; a first estimation part which estimates,from a reference image as a reference of the determination and theoptical image, each first pattern image of the patterns transferred to asubstrate by a lithography process; a first comparison part whichcompares the first pattern images with each other and, when a differenceexceeds at least one of the threshold values, determines that there is adefect; a simulated repair part which simulates a repair to the opticalimage at a portion determined as defective by the comparison; and asecond estimation part which estimates each second pattern image of thepatterns, transferred onto the substrate, from the reference image andthe simulated optical image, wherein in the second pattern image, thelithography process is more advanced than that in the first patternimage.

In another aspect of this invention, an inspection device, whichirradiates light to a sample formed with a pattern, forming an image ofthe sample on an image sensor through an optical system, and determinesthe presence of a defect, comprising: an optical image acquisition partwhich obtains an optical image of the sample from the image sensor; afirst comparison part which compares the optical image with a referenceimage as a reference of the determination and, when a difference exceedsat least one of the threshold values, determines that there is a defect;a transfer image estimation part which estimates by simulation anoptical image obtained when each pattern of an optical image on thesample and the reference image is transferred by a transfer device; anda second comparison part which compares each of the transfer images andwhen a difference exceeds at least one of the threshold values,determines that there is a defect.

In another aspect of this invention, an inspection device, whichirradiates light to a sample formed with a pattern, forming an image ofthe sample on an image sensor through an optical system, and determinesthe presence of a defect, comprising: an optical image acquisition partwhich obtains an optical image of the sample from the image sensor; afirst comparison part which compares the optical image with a referenceimage as a reference of the determination and when a difference exceedsat least one of the threshold values, determines that there is a defect;a simulated repair part which obtains the optical image determined as adefect by the first comparison part and simulates a repair to thedefect; a transfer image estimation part which estimates a transferimage of the optical image simulated by the simulated repair part and atransfer image of the reference image by simulation; and a secondcomparison part which compares each of the transfer images and when adifference exceeds at least one of the threshold values, determines thatthere is a defect.

In another aspect of this invention, an inspection method, whichirradiates light to a sample formed with a pattern, forming an image ofthe sample on an image sensor through an optical system, and determinesthe presence of a defect, comprising the steps of: obtaining an opticalimage of the sample from the image sensor; comparing the optical imagewith a reference image as a reference of the determination and, when adifference exceeds at least one of the threshold values, determiningthat there is a defect; estimating a transfer image of the optical imageand a transfer image of the reference image by simulation; comparing thetransfer image of the optical image and the transfer image of thereference image and, when a difference exceeds at least one of thethreshold values, determining that there is a defect and reviewing theoptical image, the reference image, and each of the transfer images anddetermining necessity of repair to be applied to the defect.

In another aspect of this invention, an inspection method comprising thesteps of: illuminating light to a sample formed with a pattern, formingan image of the sample on an image sensor through an optical system,obtaining an optical image of the sample from the image sensor, andcomparing the obtained optical image with a reference image and when adifference exceeds at least one of the threshold values, determiningthat there is a defect, reviewing the optical image including the defectand the reference image corresponding to the optical image anddetermining necessity of repair be applied to the defect, determiningwhether or not each transfer image of the optical image and thereference image is required to be estimated, when each of the transferimages is required to be estimated, estimating and comparing each of thetransfer images, when a difference exceeds at least one of the thresholdvalues, determining that there is a defect, reviewing each of thetransfer images, and determining the necessity of the repair applied tothe defect and when each of the transfer images is not required to beestimated, reviewing an optical image including another defect and areference image corresponding to the optical image, and determining thenecessity of the repair applied to another defect. Wherein, when each ofthe transfer images is required to be estimated, a transfer image of thesimulated optical image is estimated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram showing the configuration of an inspection systemaccording to Embodiment 1.

FIG. 2 is a schematic diagram showing a flow of data according toEmbodiment 1.

FIG. 3 is a diagram illustrating the filtering according to Embodiment1.

FIG. 4 is a diagram illustrating the way in which acquired mask data iscaptured according to Embodiment 1.

FIG. 5 a is an example of the mask shape defect according to Embodiment1.

FIG. 5 b is a wafer transfer image obtained by simulation of the aboveaccording to Embodiment 1.

FIG. 6 a is an example schematically showing the shape of a surfaceirradiated with the exposure light source according to Embodiment 1.

FIG. 6 b is a mask having a pattern shape to be used with the abovelight source according to Embodiment 1.

FIG. 6 c is a transfer image resulting from the above light source andmask pattern according to Embodiment 1.

FIG. 7 a is an example schematically showing the shape of a surfaceirradiated with the exposure light source according to Embodiment 1.

FIG. 7 b is a mask having a pattern shape to be used with the abovelight source according to Embodiment 1.

FIG. 7 c is a transfer image resulting from the above light source andmask pattern according to Embodiment 1.

FIG. 8 a is a reference image of a mask according to Embodiment 1.

FIG. 8 b is a wafer transfer image estimated from the reference imageaccording to Embodiment 1.

FIG. 9 a is an optical image of a mask including a defect according toEmbodiment 1.

FIG. 9 b is a wafer transfer image estimated from the optical imageaccording to Embodiment 1.

FIG. 10 is a screen through which an operator browses the results of thedefect determination based on the wafer transfer image and the resistimage according to Embodiment 1.

FIG. 11 shows another example of the review screen in the inspectiondevice according to Embodiment 1.

FIG. 12 is a diagram of a mask inspection review method of Embodiment 1.

FIG. 13 shows a defect estimation device and a defect estimation methodaccording to Embodiment 2.

FIG. 14 is a diagram showing the method of simulating the resist patternof Embodiment 2.

FIG. 15 is a diagram showing the configuration of an inspection systemof Embodiment 2.

FIG. 16 is a schematic diagram showing a flow of data according toEmbodiment 2.

FIG. 17 shows a defect estimation device and a defect estimation methodaccording to a third aspect of the Embodiment 2.

FIG. 18 is a diagram showing the configuration of this inspection systemaccording to the fourth aspect of Embodiment 2.

FIG. 19 is a schematic diagram showing a flow of data according toEmbodiment 2.

FIG. 20 is an example of optical image data acquisition using SEM(Scanning Electron Microscope) according to Embodiment 1.

FIG. 21 is an example of optical image data acquisition using MEM(Mirror Electron Microscope) according to Embodiment 1.

FIG. 22 is an example of optical image data acquisition using SEM(Scanning Electron Microscope) according to Embodiment 2.

FIG. 23 is an example of optical image data acquisition using MEM(Mirror Electron Microscope) according to Embodiment 2.

FIG. 24 is an example of optical image data acquisition using SEM(Scanning Electron Microscope) according to Embodiment 2.

FIG. 25 is an example of optical image data acquisition using MEM(Mirror Electron Microscope) according to Embodiment 2.

DETAILED DESCRIPTION OF THE EMBODIMENTS Embodiment 1

FIG. 1 is a diagram showing the configuration of an inspection systemaccording to an Embodiment of the present invention. The inspectionsystem of the present Embodiment will be described in connection withthe inspection of masks used in photolithography.

As shown in FIG. 1, the inspection system 100 a includes an opticalimage capture unit A and a control unit B.

The optical image capture unit A includes an irradiating laser beamlight source 103, an XYθ table 102 movable in the horizontal X and Ydirections and rotatable in a horizontal plane (or in a θ direction), anoptical illumination system 170 serving as a transmission illuminationsystem, an enlarging optical system 104, a photodiode array 105, asensor circuit 106, a position measuring system 122, and an autoloader130.

In the control unit B, a control computer 110 which controls the entireinspection system 100 a is connected through a bus 120 (serving as adata transmission path) to a position measuring circuit 107, a comparingcircuit 108, a reference circuit 112, a pattern generating circuit 111,an autoloader control unit 113, a table control circuit 114, a storageunit 109 serving as storage units, a magnetic tape unit 115, a flexibledisk unit 116, a CRT 117, a pattern monitor 118, and a printer 119. TheXYθ table 102 is driven by X-, Y-, and θ-axis motors controlled by thetable control circuit 114. These motors may be, for e.g., step motors.

Design pattern data which is used as reference data in databaseinspection is stored in the storage unit 109. This data is read out andsent to the pattern generating circuit ill when necessary in the courseof the inspection process. The pattern generating circuit 111 convertsthe design pattern data into image data (or bit pattern data). Thisimage data is then sent to the reference circuit 112 for generation ofreference data.

It should be noted that the inspection system of the present Embodimentmay include, in addition to the components shown in FIG. 1 describedabove, other known components required to inspect masks. Further,although the present Embodiment is described in connection with thedie-to-database inspection method, it is to be understood that theEmbodiment may be applied to the die-to-die inspection method. In such acase, an optical image of one of two separate identical patterns on themask is treated as a reference image.

FIG. 2 is a schematic diagram showing a flow of data according to thepresent Embodiment.

As shown in FIG. 2, CAD data 201 prepared by the designer (or user) isconverted to design intermediate data 202 in a hierarchical format suchas OASIS. The design intermediate data 202 includes data of the patternformed on the mask created for each layer. It should be noted that,generally, writing apparatuses are not adapted to be able to directlyread OASIS data. That is, each manufacturer of writing apparatus usesdifferent format data. Therefore, OASIS data is converted, for eachlayer, to format data 203 in a format specific to the inspection system100 a used, and this format data 203 is input to the inspection system100 a. Although the format data 203 may be data specific to theinspection system 100 a, the format data 203 may also be data compatiblewith a drawing device.

The format data 203 is input to the storage unit 109 of FIG. 1. Thedesign pattern data that was used to form the pattern on the photomask101 is stored in the storage unit 109.

The designed pattern includes pattern features each consisting of basicfeatures such as rectangles and triangles. The storage unit 109 storesfeature data indicating the shape, size, and position of each patternfeature, specifically, e.g., information such as the coordinates (x, y)of the reference position of each feature, the length of its sides, anda shape code (or identifier) identifying the type of shape such as arectangle or triangle.

Further, a group of pattern features, defined in an area ofapproximately a few tens of micrometers square is referred to as a“cluster” or “cell”. It is common practice that the design pattern datais defined in a hierarchical structure using clusters or cells. Acluster (or cell), which contains a pattern feature or features, may beused alone or repeated at certain intervals. In the former case thecoordinate positions of the cluster (or cell) on the photomask arespecified, whereas in the latter case the coordinate positions of eachcopy of the cluster (or cell) are indicated together with a repetitioninstruction. Each cluster (or cell) is disposed in a strip-shapedregion, referred to as a “frame” or “stripe”, having a width of a fewhundreds of micrometers and a length of approximately 100 mm whichcorresponds to the length of the photomask in the X or Y direction.

The pattern generating circuit 111 reads design pattern data of thephotomask 101 from the storage unit 109 through the control computer110.

Specifically, upon reading the design pattern data, the patterngenerating circuit 111 generates data of each pattern feature, andinterprets the shape code in the data indicative of the shape of thepattern feature and obtains its dimensions. The pattern generatingcircuit 111 then divides the pattern into an imaginary grid of squares(or grid elements) having predetermined quantization dimensions, andproduces 2-bit or other multiple-bit design image data of the designpattern segment in each grid element. By using the produced design imagedata, the pattern generating circuit 111 calculates the design patternoccupancy in each grid element (corresponding to a sensor pixel). Thispattern occupancy in each pixel represents the pixel value.

The design pattern data is converted into 2-bit or other multiple-bitimage data (bit pattern data). This image data is sent to the referencecircuit 112. After receiving the design image data (i.e., image data ofthe pattern), the reference circuit 112 performs appropriate filteringon the data.

FIG. 3 is a diagram illustrating the filtering.

The optical image, i.e. the acquired mask data 204, output from thesensor circuit 106 is somewhat “blurred” due to the resolutioncharacteristics of the enlarging optical system 104 and due to theaperture effect in the photodiode array 105, that is, this optical imageis a spatially low-pass filtered image. Therefore, since the designimage data corresponding to the optical image is digital data consistingof digital values representing the intensity (or gray scale) of eachpoint of the image, this design image data may be filtered to match the“blurred” optical image, or measurement data. In this way, a referenceimage to be compared with the optical image is produced.

Next, a method of obtaining the mask data 204 will be described usingFIGS. 1 and 4.

The optical image capture unit A shown in FIG. 1 captures an opticalimage (i.e. acquired mask data 204) of a photomask 101. It will be notedthat this acquired mask data 204 includes an image of a pattern on themask, this pattern was written in accordance with the correspondingdesign pattern data. The detailed method of capturing this mask data 204is as follows.

The photomask 101 serving as an inspection workpiece is mounted on theXYθ table 102 provided to be movable in two horizontal directions by X-and Y-axis motors and rotatable in a horizontal plane by a θ-axis motor.The pattern formed on the photomask 101 is then irradiated with lightemitted from the light source 103 disposed above the XYθ table 102. Morespecifically, the beam of light emitted from the light source 103 passesthrough the optical illumination system 170 and shines on the photomask101. The enlarging optical system 104, the photodiode array 105, and thesensor circuit 106 are disposed below the photomask 101. The lighttransmitted through the photomask 101 passes through the enlargingoptical system 104 and reaches the photodiode array 105, thereby formingan optical image thereon. It should be noted that the enlarging opticalsystem 104 may have its focus automatically adjusted by an autofocusmechanism (not shown). Further, though not shown, the inspection system100 a may be constructed so that light is also emitted from a sourcebelow the photomask 101, and the reflected light is passed through anenlarging optical system to a second photodiode array, thus capturingthe transmitted light and the reflected light simultaneously.

FIG. 4 is a diagram illustrating the way in which the mask data 204 iscaptured.

The inspection area is divided into a plurality of strip-shapedinspection stripes 20 by imaginary lines running in the X direction,where the width of each inspection stripe 20 in the Y direction is equalto the scan width W, as shown in FIG. 4. The movement of the XYθ table102 is controlled so that each inspection stripe 20 is continuouslyscanned in the negative or positive X direction with the light tocapture an image of the inspection stripe. At that time, the photodiodearray 105 continuously generates an image (of each inspection stripe 20)having a width corresponding to the scan width W, as shown in FIG. 4.After capturing an image of the first inspection stripe 20 by scanningit, e.g., in the negative X direction, the second inspection stripe 20is continuously scanned in the positive (i.e., opposite) X direction tocapture an image of a width corresponding to the scan width W. Likewise,the third inspection stripe 20 is scanned in the negative x direction(opposite the direction in which the second inspection stripe 20 isscanned) to capture an image. This way of continuously capturing animage of one inspection stripe 20 after another reduces waste ofprocessing time.

The pattern image formed on the photodiode array 105 as shown in FIG. 1is photoelectrically converted by the photodiode array 105 and A/D(analog to digital) converted by the sensor circuit 106. The photodiodearray 105 is made up of sensors arranged in an array. These sensors maybe, e.g., TDI (Time Delay Integration) sensors. Thus, the pattern on thephotomask 101 is imaged by these TDI sensors while the XYθ table 102 iscontinuously moved in the positive or negative X direction. It will benoted that the light source 103, the enlarging optical system 104, thephotodiode array 105, and the sensor circuit 106 together form a highpower optical inspection system.

The XYθ table 102 can be moved in the X and Y directions and rotated ina θ direction (or in an XY plane) by a drive system such as a 3-axis(X-Y-θ) motor driven by the table control circuit 114 under the controlof the control computer 110. These X-, Y-, and e-axis motors may be,e.g., step motors. The position of the XYθ table 102 is measured by theposition measuring system 122, and the measurement data is sent to theposition measuring circuit 107. Further, the photomask 101 isautomatically loaded onto the XYθ table 102 from the autoloader 130driven by the autoloader control unit 113, and, upon completion of itsinspection, the photomask 101 is automatically retrieved from the XYθtable 102.

acquired mask data 204 output from the sensor circuit 106 is sent to thecomparing circuit 108, i.e. first comparison unit, together with dataindicative of the position of the photomask 101 on the XYθ table 102,this data is output from the position measuring circuit 107. Themeasurement data is, e.g., unsigned 8-bit data representing the grayscale of each pixel. The reference image is then sent to the comparingcircuit 108.

The comparing circuit 108 compares each portion of the acquired maskdata 204 received from the sensor circuit 106 with the correspondingportion of the reference image generated by the reference circuit 112 inaccordance with a suitable comparison determination algorithm, and ifthe difference (e.g., in dimension) between these portions exceeds apredetermined value, the comparing circuit 108 determines that theportion of the optical image is defective. The optical image to becompared may be a transmitted image or a reflected image or acombination thereof, and the algorithm is selected to be suitable forthe image to be compared. If it is determined from the comparison that aportion of the optical image is defective, then the coordinates of thatportion and the acquired mask data 204 and the reference image, on whichthe detection of the defect is based, are stored in storage unit 109.

Incidentally, defects associated with micropatterns include not onlyshape defects typified by pattern edge roughness, but also patternlinewidth errors and pattern displacement errors, which are becomingmore and more significant due to the miniaturization of a device patternon a mask. Therefore, there has been a strong need to accurately controlthe dimensions of patterns, thus increasing the difficulty ofmanufacturing masks. As a result, there has been loss in the yield ofmasks that meet required specifications, thereby raising maskmanufacturing cost. In order to address this problem, a defectevaluating method has been proposed which uses a lithography simulator.This method simulates the image which would be printed from the mask toa wafer by the photolithography apparatus and determines whether or notthe pattern on the mask is defective by inspecting the simulated image.The wafer transfer simulator is a transfer image estimation part of thisinvention.

In the prior art inspection device, when it is determined that there isa defect, the acquired mask data used as a basis for the determinationand the corresponding reference image are stored in the inspectiondevice along with their coordinates. When the inspection of one mask iscompleted, an operator visually confirms a pattern at a defect portionutilizing an observation optical system in the inspection device. Then,the necessity of repair is determined. After a defect to be repaired isdetermined, the mask and the information required for the repair aresent to a repair device. The information required for the repair iscut-out pattern data for use in the recognition of, coordinates in themask, discrimination between extrusion and intrusion defects,discrimination whether to remove a light-shielding film or deposit apattern at a portion to be repaired by the repair device. The aboveacquired mask data can be utilized as the cut-out pattern data.

FIG. 5 a is an example of the mask shape defect. In this example, thereis a fracture of an assist pattern 1002 in a region 1003. The assistpattern 1002 is an auxiliary pattern, which is provided in a mask forthe purpose of improving the patterning characteristics of a mainpattern 1001. The assist pattern 1002 itself is not transferred onto awafer. When a wafer transfer image on the mask of FIG. 5 a is estimatedby simulation, the wafer transfer image shown in FIG. 5 b is obtained.That is to say, in the wafer transfer image, the line width at thedefect portion is smaller than the line width of a pattern at a normalportion. When the degree of reduction in the line width is more than aspecified value, a region 1004 is determined as the defect portion to berepaired. The degree of reduction in the line width may be specified bya difference of an estimated line width between the normal portion andthe defect portion or may be specified by the ratio of the estimatedline width of the defect portion to the normal portion.

In the examples of FIGS. 5 a and 5 b, since the line width of the mainpattern 1001 is small in a wafer transfer estimated image, it is decidedto repair the line width of the main pattern 1001. However, in thiscase, not the main pattern 1001 but the assist pattern 1002 is repaired.That is to say, not the line width of the main pattern 1001 but thefracture of the assist pattern 1002 is repaired.

Recently, the intensity and irradiation direction of a light source usedin an exposure device for forming a pattern on a mask have beenoptimized, and a minute pattern is formed on the mask. In this case, avery complex shaped pattern is drawn on the mask.

FIG. 6 a is an example schematically showing a shape 1 of a surfaceirradiated with the exposure light source. The light intensity isuniformly distributed on the irradiated surface, and there is nodirectivity in the irradiation direction. The exposure light source andthe mask having a pattern shape 2 shown in FIG. 6 b are combined, and atransfer image obtained when a pattern is transferred onto a wafer isestimated. In this case, a transfer image 3 like FIG. 6 c is obtained.In FIG. 6 c, the line width of each pattern is uneven, and the shapewill be regarded as a defect according to the decision criterion.

On the other hand, a light source having a distribution 4 in the lightintensity and the directivity in the irradiation direction as shown inFIG. 7 a and a mask having a pattern shape 5 shown in FIG. 7 b arecombined, and a pattern is transferred onto a wafer. An estimatedtransfer image 6 like FIG. 7 c is obtained. The shape of the lightsource and the mask pattern are optimized thus, whereby a minute patterncomprising desired line width and spacing can be formed.

However, when there is a defect in the pattern of FIG. 7 b, it isdifficult to grasp a correspondence relationship between a repairedportion on a mask and an improved portion in a wafer transfer image.That is to say, an exposure image transferred from a mask to a wafer isestimated by wafer transfer simulation, and when any shape defect isdetected on the exposure image, In the pattern shown in FIG. 7 b, it isnot easy to estimate a portion of a mask to be repaired for improvingthe wafer transfer image.

FIG. 8 a is a reference image of a mask. FIG. 8 b is a wafer transferimage estimated from the reference image. FIG. 9 a is an optical imageof a mask (acquired mask data) including a defect. FIG. 9 b is a wafertransfer image estimated from the optical image.

When the wafer transfer image 8 of FIG. 8 b and the wafer transfer image12 of FIG. 9 b are compared, the wafer transfer image 12 has a defectportion 13 where the pattern line width is reduced. Meanwhile, when thereference image 7 of FIG. 8 a and the optical image 9 of FIG. 9 a arecompared, the optical image 9 has two defect portions 10 and 11 where apattern is fractured. Even if there is a plurality of defects in anoptical image, in a wafer, a defect does not always occur near thecoordinates corresponding to the defects. That is to say, in FIGS. 9 aand 9 b, although there are two defect portions in the mask, there isone defect portion in the wafer transfer image. Thus, it is difficult toestimate the correspondence relationship between the defect portions 10and 11 and the defect portion 13. That is to say, it is difficult toestimate whether the defect portion 13 of the wafer transfer image 12 isimproved by repairing any one of the defect portions 10 and 11, orwhether the defect portion 13 is improved by repairing both the defectportions 10 and 11.

The larger the number of the defect portions, the more complex thecorrespondence relationship between the defect portion of a mask and thedefect portion of a wafer transfer image. This easily occurs when thedefect portions approach each other on a mask or a wafer. For example,there are three defect portions I, II and III in a mask, and there isone defect portion in a wafer transfer image. In this case, at firstglance it is hard to tell which of I, II and III causes the defect inthe wafer transfer image or which combination of I, II and III (such asthe combination of I and II and the combination of I, II and III) causesthe defect in the wafer transfer image.

When there are a plurality of defects in a mask, it is determined thatrepair be performed, changing the combination of the defects, a wafertransfer image is estimated from an optical image of the repaired mask,and then evaluated as to whether or not the wafer transfer image can berestored to a normal state. However, the optical image of the maskhaving defects has simulated repair performed in the inspection device,and if the wafer transfer image can be simulated, the repaired portionand the suitability of the level of repair can be evaluated withoutactual repair.

In order to simulate repair to an optical image of a mask and estimate arepaired wafer transfer image, the inspection device 100 a of thepresent Embodiment has a simulated repair circuit 300 and a wafertransfer simulator 400. The wafer transfer simulator may be an externaldevice of the inspection system 100 a. In this case, the inspectiondevice 100 a has an interface part which can exchange data with thewafer transfer simulator, and necessary information is sent from theinspection system 100 a to the wafer transfer simulator.

The flow of data in the inspection system 100 a will be described usingFIG. 2.

The acquired mask data of the defect portion of mask inspection results205 is sent to the simulated repair circuit 300 to be simulated. Whenthere are a plurality of defect portions in the acquired mask data, therepaired portion is changed, and a plurality of times of simulatedrepair are performed.

For example, if the repair of a defect portion can restore the wafertransfer image to a normal state, then in the repair process we shouldonly be concerned with this specific portion. On the other hand, if anindividual defect portion is repaired but the wafer optical image cannotbe restored to a normal state then a combination of two portions isrepaired. If any of the above combinations do not restore the wafertransfer image to a normal state then a combination of three portionsare repaired. Furthermore, any combination of portions exceeding thisnumber can be utilized in any combination to restore the wafer transferimage to its normal state. As a result we should only be concerned withthe specific portions that can restore the wafer transfer image to anormal state.

When the defect coordinates on a mask approach each other, the wafertransfer image is not estimated for each defect, but the wafer transferimage is estimated for each region including the defects. That is tosay, the wafer transfer image is estimated based on an optical imageincluding all defects in a predetermined range.

For example, in the example of FIG. 9 a, there are two defect portions10 and 11. In the inspection process, these defect portions areseparately detected, and the coordinates of the defect portions and theoptical image are individually stored. However, the pattern of FIG. 9 ais established by a combination of a plurality of patterns. Thesepatterns influence each other to transfer one pattern onto a wafer.Thus, when the wafer transfer image is estimated, the mutual influencebetween a plurality of defect portions should be considered. When thewafer transfer image is estimated for each defect, a real wafer transferimage is not estimated. That is to say, it is determined that the defectportions 10 and 11 influence each other, whereby a defect of a shapethat cannot be associated from the mask defect shape is transferred ontothe wafer, or a pattern on the wafer not corresponding to the patternincluding the defect on the mask may be affected by the defect.

The simulation of the repair to the acquired mask data is returned tothe mask inspection results 205 again and thereafter sent to the wafertransfer simulator 400 along with a reference image at the correspondingportion. Instead of the reference image, an image obtained by simulatinga mask production process from pattern data prior to addition of a RETpattern of mask design may be used.

In the wafer transfer simulator 400, the wafer transfer image isestimated by simulation. Specifically, the wafer transfer image isestimated from the reference image as a model, and, at the same time,the wafer transfer image is also estimated from the simulation of theacquired mask data 204. When a plurality of times of simulated repair isperformed, changing the defect portion to be repaired, a plurality ofthe wafer transfer images are estimated from the repaired mask data 204.Thereafter, the wafer transfer images are sent from the wafer transfersimulator 400 to a comparing circuit 301 (a second comparison part).

In the comparing circuit 301, the wafer transfer image estimated fromthe reference image and the wafer transfer image estimated from thesimulation of the acquired mask data 204 are compared with each otherusing an appropriate comparative determination algorithm. As the resultof the comparison, when it is determined that there is a defect, thecoordinate and the wafer transfer image as a basis for the defectdetermination are stored as transfer image inspection results 206.

In the inspection device of the present Embodiment, a wafer transferimage may be estimated by a transfer simulator without simulated repair.That is to say, as the result of the comparison in the comparing circuit108 of FIG. 2, the coordinate at the portion determined as a defect, theoptical image, and the corresponding reference image are sent to thewafer transfer simulator 400, and the wafer transfer image obtained bytransferring the pattern onto a wafer is estimated. Thereafter, in thecomparing circuit 301, the wafer transfer image estimated from thereference image and the wafer transfer image estimated from the opticalimage are compared with each other. As the result of the comparison,when it is determined that there is a defect, the coordinate and thewafer transfer image as a basis for the defect determination are storedas the transfer image inspection results 206.

In the present Embodiment, the wafer transfer image is estimated withoutsimulated repair, and the defect on the mask and the defect on the waferare indicated. Thereafter, the defect on the mask is simulated, and thewafer transfer image may be estimated in the simulated pattern. Thewafer transfer image estimated from the reference image and the wafertransfer image estimated from the simulation of the acquired mask data204 is compared with each other, whereby confirmation can be made as towhether or not the initially indicated defect on the wafer iseliminated.

The mask inspection results 205 and the transfer image inspectionresults 206 are sent to a review device 500 which is an external deviceof the inspection system 100 a. In this review process, the operatordetermines whether a pattern defect found in the inspection can betolerated. In the review device 500, an image at the defect portion ofthe mask is displayed while a table on which the mask is placed is movedso that the defect coordinates of defects can be observed one by one. Atthe same time, judgment of the defect determination, the optical imageas a basis for the determination and the reference image are arrangedand displayed on a screen so that the judgment, the optical image andthe reference image can be confirmed. The defect on the mask and theinfluence on the wafer transfer image are arranged and displayed in areview process, whereby the determination whether or not the maskpattern should be repaired is facilitated. In general, projection fromthe mask to the wafer is performed while reduction to approximatelyquarter size is performed, and therefore, when images are arranged anddisplayed, the reduction scale has to be considered.

All defects detected by the inspection system 100 a are discriminated inthe review device 500. However, when the defect detected in the wafertransfer image is minor, the defect may be removed from an object to bereviewed by pre-processing.

The discriminated defect information is returned to the inspectionsystem 100 a and stored in the storage unit 109. When even one defect tobe repaired is confirmed in the review device 500, the mask is sent to arepair device 600, which is an external device of the inspection system100 a, along with a defect information list 207. Since the repair methodis different according to the type of the defect, that is, between theextrusion and intrusion defects, the type of the defect includingdetermination between the extrusion and intrusion defects and thecoordinate of the defect are added to the defect information list 207.

In the present Embodiment, the inspection system 100 a itself may havethe review function. In this case, the mask inspection results 205 andthe transfer image inspection results 206 are displayed as images withincidental information of the defect determination on the screen of thecontrol computer 110 or a screen of a separately provided calculator.The image of the mask defect portion is displayed using an observationoptical system image of the inspection system 100 a.

FIG. 10 is a screen through which an operator browses the results of thedefect determination based on the wafer transfer image and the resistimage. The upper stage, displayed on the top half of the screen, is areference image or an optical image using a die-to-die comparisonmethod. The lower stage, displayed on the bottom half of the screen, isan optical image including the defect. In each stage, the images are (1)an image taken by a transmission optical system of the inspectionsystem, (2) an image taken by a reflection optical system of theinspection system, (3) a mask image estimated from these images, (4) awafer transfer image obtained by simulating and estimating exposureconditions based on the mask image, and (5) a resist image obtained bysimulating and estimating characteristics of resist in sequence from theleft of FIG. 10.

According to the review screen shown in FIG. 10, since the referenceimage, the optical image, and the transfer image estimated from them arearranged and displayed, the operator compares these images and canlocate a defect to be reviewed.

FIG. 11 shows another example of the review screen in the inspectiondevice. The screen consists of, a window, through which the referenceimage as the basis for the defect determination and the optical imageincluding the defect are displayed so that the operator can compare thereference image and the optical image, and a window through which thedefect distribution in the inspection range on the mask is displayed.There may be further provided with a profile screen window through whicha difference between the optical image and the reference image isdisplayed, the brightness of each pixel of the optical image and thereference image are dumped and displayed with numeric values, and thesensor brightness is displayed when sectioned by the x and y axes forthe purpose of analyzing the defect.

In the present Embodiment, the review screens of FIGS. 10 and 11 can beselectively displayed. The review method in this case will be describedwith reference to FIG. 12.

Mask inspection (30) of FIG. 12 is performed by the optical image(acquired mask data) acquisition process illustrated in FIG. 2, areference image generation process, and a comparison process. In themask inspection (30), the acquired mask data and the reference image arecompared with each other using the appropriate comparative determinationalgorithm. When the difference between them exceeds at least one of thethreshold values, the portion is determined as the defect portion. Whenit is determined there is a defect, the coordinate of the defect, theacquired mask data as the basis for the defect determination, and thereference image are stored as the mask inspection results.

The mask inspection results are sent to the review device, and thenecessity of repair is determined by the review of the operator (thefirst review (31)). In the first review (31), the review screen of FIG.11 can be used, and the operator compares the reference image as thebasis for the defect determination with the optical image including thedefect and reviews. At this time, if the pattern shape formed in themask is relatively simple, the operator does not start the wafertransfer simulator and predicts the defect portion on the wafer from thedefect portion of the mask, so that the necessity of repair can bedetermined. Meanwhile, as illustrated in FIG. 7, when a minute patternis formed in the mask in consideration of the combination of the patternformed in the mask and the light source used in the exposure device, itis difficult to judge the necessity of repair without estimating thewafer transfer image.

Thus, after the first review (31), determination of the necessity of thewafer transfer image (32) is performed. When it is determined that thewafer transfer image is not required, the wafer transfer simulator isnot started. Then, judgment as to whether or not all defects arereviewed (35) is performed. When all defects are not reviewed, theprocess returns to the first review (31). When all defects are reviewed,a series of the inspection process and the review process areterminated. Meanwhile, when it is determined that the wafer transferimage is required, the estimation of the wafer transfer image (33) isperformed. As illustrated in FIG. 2, the estimation of the wafertransfer image (33) may be performed after the simulated repair of thedefect portion. The transfer image inspection results are sent to thereview device, and the second review (34) is performed by the operator.The review screen of FIG. 10 is used in the second review (34). That isto say, the operator compares and reviews the reference image, theoptical image, and the transfer image estimated from them. Thereafter,the judgment as to whether or not all defects are reviewed (35) isperformed. When all defects are not reviewed, the process returns to thefirst review (31). When all defects are reviewed, a series of theinspection process and the review process are terminated.

As described above, in the Embodiment 1, the wafer transfer simulator isstarted for each detection of the mask defect by the inspection device,and the wafer transfer image can be estimated. However, the necessity ofthe wafer transfer image is determined after review, and when it isjudged that the wafer transfer image is required, the wafer transfersimulator may be started. The latter method is effective to examine theexposure conditions when a pattern is transferred from the mask to thewafer, for example, the degree of influence of the mask defect when theirradiance level, the light source, and so on are changed.

The features and advantages of the present invention may be summarizedas follows.

According to the present Embodiment, there is provided an inspectiondevice and an inspection method, which can facilitate the defectdetermination process for a mask and perform the defect determinationprocess while estimating a defect on the mask and the resultantinfluence on a wafer image.

It is to be understood that the present Embodiment is not limited to theabove-mentioned method and apparatus.

In this case, Unit A of the optical image data apparatus as shown inFIG. 1 can utilize an irradiating laser beam light source 103. However,optical image data can also be acquired by using an electron beam. Forexample, the inspection apparatus can use SEM (Scanning ElectronMicroscope) or MEM (Mirror Electron Microscope).

FIG. 20 is an example of an inspection apparatus utilizing SEMtechnique. The individual components of FIG. 20 are the same as FIG. 1and are numbered the same as in FIG. 1, with the exception of Unit A.

In the example of FIG. 20 the electron beam from the electron gun 40 isfocused by the condenser lens 41 and then irradiated to the mask 39placed on the stage 43. The movement of the scanning line and scanningspeed on the mask 39 are controlled by the scanning coil 45. After theelectron beam is irradiated on the mask 39, the reflected electron isguided to the detector 42. The output signal from the detector 42 isamplified by the sensor (not shown), then converted to digital data,then this signal is sent to the comparing circuit 108 (first comparisonpart).

FIG. 21 is another example using MEM to acquire optical image data as inUnit A of FIG. 1. The individual components of FIG. 21 are the same asFIG. 1 and are numbered the same as in FIG. 1, with the exception ofUnit A.

As shown in FIG. 21. The mask 53 is placed on an insulated material 60on the stage 55. The electron beam from the electron beam gun 50 isfocused by the condenser lens 51, then deflected by the ExB deflector52, after, the electron beam passes through the objective lens 54forming an expanded beam which reaches the mask 53 vertically. After theelectron beam is irradiated on the mask 53, the reflected beam istransmitted through the objective lens 54 to the focus lens 56 and thenis projected on to the fluorescent screen 57. The optical image on thefluorescent screen 57 is focused on to the light receiving surface ofCCD 59 by an optical lens 58. Then, the image of pattern focused on theCCD 59 is transformed into the digital data, then sent to the comparingcircuit 108 (first comparing unit).

The above description of the present Embodiment has not specifiedapparatus constructions, control methods, etc. which are not essentialto the description of the invention, since any suitable apparatusconstructions, control methods, etc. can be employed to implement theinvention. Further, the scope of this invention encompasses all patterninspection systems and pattern inspection methods employing the elementsof the invention and variations thereof which can be designed by thoseskilled in the art.

Embodiment 2

FIG. 5 a is an example of the mask shape defect. In this example, thereis a fracture of an assist pattern 1002 in a region 1003. The assistpattern 1002 is a pattern, which is auxiliary provided in a mask for thepurpose of improving the patterning characteristics of a main pattern1001. The assist pattern 1002 itself is not transferred onto a wafer.When a wafer transfer image on the mask of FIG. 5 a is estimated bysimulation, the wafer transfer image shown in FIG. 5 b is obtained. Thatis to say, in the wafer transfer image, the line width at the defectportion is smaller than the line width of a pattern at a normal portion.When the degree of reduction in the line width is more than a specifiedvalue, a region 1004 is determined as the defect portion to be repaired.The degree of reduction in the line width may be specified by adifference of an estimated line width between the normal portion and thedefect portion or may be specified by the ratio of the estimated linewidth of the defect portion to the normal portion.

In the examples of FIGS. 5 a and 5 b, since the line width of the mainpattern 1001 is small in a wafer transfer estimated image, it isdetermined to repair the line width of the main pattern 1001. However,in this case, not the main pattern 1001 but the assist pattern 1002 isrepaired. That is to say, not the line width of the main pattern 1001but the fracture of the assist pattern 1002 is repaired.

Recently, the intensity and the irradiation direction of a light sourceused in an exposure device for forming a pattern on a mask have beenoptimized, and a minute pattern can be formed in the mask. In this case,a very complex shaped pattern can be drawn on the mask.

FIG. 6 a is an example schematically showing a shape of a surfaceirradiated with the exposure light source. The light intensity isuniformly distributed in the irradiated surface, and there is nodirectivity in the irradiation direction. The exposure light source andthe mask having a pattern shape shown in FIG. 6 b are combined, and atransfer image obtained when a pattern is transferred onto a wafer isestimated. In this case, a transfer image like FIG. 6 c is obtained. InFIG. 6 c, the line width of each pattern is uneven, and the shape willbe regarded as a defect according to the decision criterion.

On the other hand, a light source having a distribution in the lightintensity and the directivity in the irradiation direction as shown inFIG. 7 a and a mask having a pattern shape shown in FIG. 7 b arecombined, and a pattern is transferred onto a wafer. An estimatedtransfer image like FIG. 7 c is obtained. The shape of the light sourceand the mask pattern are optimized thus, whereby a minute patterncomprising desired line width and spacing can be formed.

However, when there is a defect in the pattern of FIG. 7 b, it isdifficult to grasp a correspondence relationship between a repairedportion on a mask and an improved portion in a wafer transfer image.That is to say, an exposure image transferred from a mask to a wafer isestimated by wafer transfer simulation, and when any shape defect isdetected on the exposure image, In the pattern shown in FIG. 7 b, it isnot easy to estimate a portion of a mask to be repaired for improvingthe wafer transfer image.

FIG. 8 a is a reference image of a mask. FIG. 8 b is a wafer transferimage estimated from the reference image. FIG. 9 a is an optical imageof a mask (acquired mask data) including a defect. FIG. 9 b is a wafertransfer image estimated from the optical image.

When the wafer transfer image 8 of FIG. 8 b and the wafer transfer image12 of FIG. 9 b are compared, the wafer transfer image 12 has a defectportion 13 where the pattern line width is reduced. Meanwhile, when thereference image 7 of FIG. 8 a and the optical image 9 of FIG. 9 a arecompared, the optical image 9 has two defect portions 10 and 11 where apattern is fractured. Even if there is a plurality of defects in anoptical image, in a wafer, a defect does not always occur near thecoordinates corresponding to the defects. Namely, in FIGS. 9 a and 9 b,although there are two defect portions in the mask, there is one defectportion in the wafer transfer image. Thus, it is difficult to estimatethe correspondence relationship between the defect portions 10 and 11and the defect portion 13. That is to say, it is difficult to estimatewhether the defect portion 13 of the wafer transfer image 12 is improvedby repairing any one of the defect portions 10 and 11, or whether thedefect portion 13 is improved by repairing both the defect portions 10and 11.

The larger the number of the defect portions, the more complex thecorrespondence relationship between the defect portion of a mask and thedefect portion of a wafer transfer image. This easily occurs when thedefect portions approach each other on a mask or a wafer. For example,there are three defect portions I, II and III in a mask, and there isone defect portion in a wafer transfer image. In this case, at firstglance it is hard to tell which of I, II and III causes the defect inthe wafer transfer image or which combination of I, II and III (such asthe combination of I and II and the combination of I, II and III) causesthe defect in the wafer transfer image.

When there are a plurality of defects in a mask, it is determined thatrepair is to be performed, changing the combination of the defects, awafer transfer image is estimated from an optical image of the repairedmask, and whether or not the wafer transfer image is restored to anormal state is confirmed. However, the optical image of the mask havingdefects is simulated in the inspection device, and if the wafer transferimage can be simulated, the repaired portion and the suitability of thelevel of repair can be evaluated without actual repair. If this functionis provided to an inspection device, the inspection device is capable ofindicating the level of influence which the mask defect exerts on awafer, or which pattern on the mask should be repaired to eliminate thedetected defect.

Hereinafter, each aspect of the present Embodiment will be describedwith reference to the drawings.

(1) Defect Estimation Device and Defect Estimation Method

A defect estimation device and a defect estimation method according to afirst aspect of the Embodiment 2 will be described with reference toFIG. 13. A portion surrounded by a dot line in FIG. 13 is a main portionconstituting the defect estimation device.

The defect estimation device has a simulator (also referred to as anestimation part, and the same in the present application) 700, acomparing circuit 302, and a simulated repair circuit 303. Referenceimage data D₁ and optical image data D₂ are input to the simulator 700.This data can be generated in the inspection device as described in theEmbodiment 2.

The simulator 700 estimates a pattern image to be transferred from themask to the wafer, using the reference image data D₁ and the opticalimage data D₂. The pattern image may be a resist pattern image at anystage in a series of a lithography process such as development andetching or may be a circuit pattern image finally formed in the wafer.The wafer is an example of a substrate in this invention.

For example, a photo mask formed with a predetermined circuit pattern isa test object. The photo mask is used for transferring the circuitpattern onto a wafer. The transfer is performed by the followingprocess, for example. First, a resist film is provided on the wafer.Next, the wafer is exposed by an exposure device through the photo maskto transfer an exposure image of the circuit pattern to the resist film.Then, the resist film is developed to form a resist pattern. Thereafter,a lower film is etched using the resist pattern as a mask, and afterthat, the resist film is peeled. By doing this, the lower film can beprocessed to a pattern having a desired shape. Next, copper (Cu) or thelike is filled in a recess of the lower film, and thereafter, anunnecessary portion is removed by a CMP (Chemical MechanicalPlanarization) method, whereby a wiring pattern is formed.

In the above example, the simulator 700 can estimate the exposure imageto be transferred from the mask to the wafer by the exposure device andcan also estimate a resist pattern image to be formed on the wafer.Alternatively, the simulator 700 can estimate a pattern image of therecess to be formed in the lower film and a wiring pattern image afterbeing filled with copper and the like. These pattern images include apattern image I₁ estimated from the reference image data D₁ and apattern image I₂ estimated from the optical image data D₂. In thepresent Embodiment, images estimated by the simulator 700, that is, theexposure image transferred from the mask to the wafer by the exposureimage, the resist pattern image formed on the wafer, the wiring patternimage, and so on are collectively referred to as pattern images and arediscriminated from the reference image data D₁ and the optical imagedata D₂.

The simulation can be performed, for instance, as stated below.

<Simulation of Exposure Image>

As the simulation of the exposure image such as the circuit patterntransferred onto the wafer by the exposure device, Non-Patent Document 3(H. H. Hopkins, On the di_reaction theory of optical images, In Proc.Royal Soc. Series A., volume 217 No. 1131, pages 408-432, 1953) and N. BCobb, (Fast Optical and Process Proximity Correction Algorithms forIntegrated Circuit Manufacturing) A dissertation submitted in partialsatisfaction of the requirements for the degree of Doctor Of Philosophyin Engineering: Electrical Engineering and Computer Science in theGraduate Division of the University of California in Berkeley, Spring1988 can be referred to.

An optical system of the exposure device is a partially coherent opticalsystem. When a pattern drawn on a mask by the exposure device istransferred onto a wafer, light intensity I(x, y) at a point (x, y) onthe wafer can be calculated using the following formula by obtaining theFourier transformed quantity I*(f_(x), f_(y)). i is a pure imaginarynumber, and i=(−1)^(1/2). I(x, y)=∫∫I*(f_(x), f_(y)) exp{−2πi(f_(x)x+f_(y)y)}df_(x)df_(y)

I*(f_(x), f_(y)) can be obtained using the following Hopkins formula:I*(f _(x) ,f _(y))=∫∫T(f _(x) +f _(x) ′,f _(y) +f _(y) ′;f _(x) ,f_(y))×G(f _(x) +f _(x) ′,f _(y) ′+f _(y)′)×G*(f _(x) ′,f _(y)′)df _(x)′df _(y)′

In the Hopkins formula, G(f_(x), f_(y)) represents the Fouriertransformed quantity of the mask. T(f_(x)′, f_(y)′; f_(x), f_(y))represents transmission cross coefficients and is calculated as follows:T(f _(x) ′,f _(y) ′;f _(x) ″,f _(y)″)=∫∫J ₀ ⁻(f _(x) ,f _(y))×K(f _(x),f _(y) ′,f _(y) ,f _(y)′)×K*(f _(x) +f _(x) ″,f _(y) +f _(y)″)df _(x)df _(y)

In the above formula, J₀ ⁻(f_(x), f_(y)) represents light sourceintensity distribution in an effective source. K(f_(x), f_(y))represents a pupil function (coherent transmission function). In a maskoptimized by changing the shape of the light source by SMO (source maskoptimization), the change of the shape of the light source is reflectedin the light source intensity distribution J₀ ⁻(f_(x), f_(y)).

<Simulation of Resist Pattern from Exposure Image>

As the simulation of the resist pattern from the exposure image,Non-Patent Document 4 (N. B. Cobb, A. Zakhor, M. Reihani, F. Jahansooz,and V. N. Raghavan: Proc. SPIE 3051 (1997) 458) and N. B Cobb, (FastOptical and Process Proximity Correction Algorithms for IntegratedCircuit Manufacturing) A dissertation submitted in partial satisfactionof the requirements for the degree of Doctor Of Philosophy inEngineering: Electrical Engineering and Computer Science in the GraduateDivision of the University of California in Berkeley, Spring 1988 can bereferred to.

The method described in the Non-Patent Document 4 is as follows. First,a plurality of design patterns are previously provided to be transferredand developed, the finished resist pattern is measured, a lightintensity distribution when each pattern is transferred by the exposuredevice is obtained by the simulation of the exposure image. FIG. 14shows one such example.

As shown in FIG. 14, with regard to each pattern, (1) light intensityand (2) inclination of the light intensity at the edge of the designpattern are obtained from exposure amount distribution. Since themeasurement result of the corresponding finished pattern shows theposition of the side of a figure, the light intensity corresponding tothe position is obtained. The light intensity is a threshold valuedetermining the position of the side of a pattern and is function of (1)the light intensity and (2) the inclination of the light intensity atthe edge of the design pattern.

Table 1 is one such example.

TABLE 1 Light Intensity 1.00 0.95 0.90 Inclination 1.00 1.00 0.99 0.980.95 0.99 0.98 0.97 0.90 0.99 0.98 0.97

The actual simulation is performed as follows. The optical distributionfor the pattern to be simulated in a resist shape is obtained by theexposure image simulation, and the light intensity and the inclinationat the position of the side are obtained. The threshold value of thelight intensity is obtained from the light intensity distribution andthe inclination, using the relationship shown in the table 1. Then, theposition of the side is calculated from the optical distribution,obtained by the exposure image simulation, and the threshold value.Accordingly, since the movement of the position of the side is shown,the finished pattern can be simulated.

<Simulation of Pattern Shape after Wafer Process Processing Such asEtching>

In a manufacturing process of LSI, a resist pattern is formed on awafer. Thereafter, a lower film is etched using the resist pattern as amask to form a pattern having a desired shape in the lower layer. When amultilayer wiring structure is formed by a damascene method, the lowerfilm is used as an insulating film, and a conductive barrier film and acopper main conductive film are filled in a recess of the insulatingfilm after etching to form a copper wiring pattern.

As described above, in a series of the LSI manufacturing process,various patterns other than the resist pattern are formed. As for thesimulation of the patterns, Non-Patent Document 5 (M. Osawa, T. Yao, H.Aoyama, K. Ogino, H. Hoshino, Y. Machida, S. Asai, and H. Arimoto, J.Vac. Sci. Technol. B21 (2003) 2806) and N. B Cobb, (Fast Optical andProcess Proximity Correction Algorithms for Integrated CircuitManufacturing) A dissertation submitted in partial satisfaction of therequirements for the degree of Doctor Of Philosophy in Engineering:Electrical Engineering and Computer Science in the Graduate Division ofthe University of California in Berkeley, Spring 1988 can be referredto.

According to the Non-Patent Document 5, a point (x, y) on a side ismoved by δ(x, y) outward and perpendicularly to the side, the movementamount is represented by the following formula:

δ 1(x, y) = γ∫_(Pattern)g(x − x^(′), y − y^(′)) 𝕕x^(′)𝕕y^(′) + f(L)

In the above formula, L is a size of a figure to which a noticing pointon a side belongs. f(L) in the second term is the movement amount of thepoint (x, y) determined by the size of the figure. The first term is themovement amount at the point (x, y) generated by the influence of thefigure to which the noticing point belongs and the surrounding figure.The first term contributes to the description in the Non-Patent Document5. γ is an indication of the ratio of the movement amount changingdepending on a pattern. g(x, y) is specified as follows:

∫_(A)g(x) 𝕕x = ∫_(−∞)^(∞)∫_(−∞)^(∞)g(x, y) 𝕕x 𝕕y = 1

Since the above functions and the parameter γ are different according toa material, processing method, and processing time of a film which is anobject subjected to, for example, etching, they are previouslydetermined by experiment. Accordingly, since the movement of theposition of the side is shown, the finished pattern can be simulated.

By virtue of the above simulation method, the pattern images I₁ and I₂estimated by the simulator 700 are sent to the comparing circuit 302. Inthe comparing circuit 302, the pattern image I₁ estimated from thereference image data D₁ and a pattern image I₂ estimated from theoptical image data D₂ are compared with each other using the appropriatecomparative determination algorithm. For example, in the resist pattern,the information of patterns to be described respectively in the patternimages I₁ and I₂ are compared, and when the difference between thepositions of the corresponding sides is more than a predetermined level,for example, 4 nm, it is regarded that there is a defect. As the resultof the comparison, when it is determined that there is a defect, thecoordinate and the pattern images I₁ and I₂ as the basis for the defectdetermination are stored in the comparing circuit 302. For example, inFIG. 9 b, the defect portion of the pattern image I₂ is indicated byreference numeral 13.

With regard to the portion determined as a defect based on the patternimages I₁ and I₂, the reference image data D₁ at the correspondingposition of the mask and the optical image data D₂ are sent to thesimulated repair circuit 303. In the simulated repair circuit 303,simulated repair is applied to the defect portion sent to the simulatedrepair circuit 303. simulated repair is performed as follows. Thereference image data D₁ of the mask and the optical image data D₂ arecompared with each other, and different positions are found around theposition estimated as a defect. The optical information at the differentposition is replaced with the corresponding optical information of thereference image. For example, the information of the defect portionindicated by reference numeral 10 in FIG. 9 a is replaced with theinformation of the defect portion denoted by reference numerals 701 and702 in FIG. 7 b. When there are a plurality of defect portions in thepattern image I₂, the repaired portion is changed, and a plurality oftimes of simulated repair are performed, whereby a defect that willcause a pattern error can be specified.

For example, if the repair of a defect portion can restore the wafertransfer image to a normal state, then in the repair process we shouldonly be concerned with this specific portion. On the other hand, if anindividual defect portion is repaired but the wafer optical image cannotbe restored to a normal state, then a combination of two portions isrepaired. If any of the above combinations do not restore the wafertransfer image to a normal state then a combination of three portionsare repaired. Furthermore, any combination of portions exceeding thisnumber can be utilized in any combination to restore the wafer transferimage to its normal state.

When contiguous defect coordinates are stored as optical image data D₂in the comparing circuit 302, in the simulated repair circuit 303,simulated repair is performed for each region including the defects.That is, the optical image data D₂ including all defects in apredetermined range is simulated.

For example, in the example of FIG. 9 a, there are the two defectportions 10 and 11. The defect portions are separately detected in thecomparing circuit 302, and the coordinates of the defect portions andthe pattern image I₂ are individually stored. However, the pattern ofFIG. 9 a is established by a combination of a plurality of patterns.These patterns influence each other to transfer on pattern onto a wafer.Thus, when the pattern image I₂ is estimated, the mutual influencebetween a plurality of defect portions should be considered. When thepattern image I₂ is estimated for each defect, a real pattern image I₂is not estimated. That is to say, it is determined that the defectportions 10 and 11 influence each other, whereby a defect of a shapethat cannot be associated from the mask defect shape is transferred ontothe wafer, or a pattern on the wafer not corresponding to the patternincluding the defect on the mask is affected by the defect.

The simulated optical image data D₂ as new optical image data D₂′ isreturned to the simulator 700 again. In the simulator 700, a new patternimage I₃ is estimated from the reference image data D₁ as a model, and anew pattern image I₄ is also estimated from the simulated optical imagedata D₂′. When a plurality of times of simulated repair are performedchanging the defect portion to be repaired, a plurality of the newpattern images I₄ estimated from the repaired optical image data D₂′ areobtained.

The pattern images I₃ and I₄ may be at the same stage of the lithographyprocess as the pattern image I₁ and I₂ or may be in the more advancedstate than the pattern image I₁ and I₂. For example, all the patternimages I₁, I₂, I₃ and I₄ may be exposure images transferred from themask to the wafer by the exposure device. When the pattern images I₁ andI₂ are resist pattern images formed on the wafer, the pattern images I₃and I₄ may be wiring pattern images formed on the wafer.

The pattern images I₃ and I₄ newly estimated by the simulator 700 aresent from the simulator 700 to the comparing circuit 302 again. Thepattern image I₃ as a model and the pattern image I₄ after repair arecompared with each other, whereby confirmation can be made as to whetheror not the initially indicated defect on the wafer is eliminated. As theresult of the comparison, the coordinate determined as a defect and thepattern images I₃ and I₄ as the basis for the defect determination areoutput as a defect information list 208 a to an external device alongwith the reference image data D₁ and the optical image data D₂.

In the present Embodiment, the defect information list 208 a is sent tothe review device 500. In this review process, the operator determineswhether a pattern defect found in the inspection can be tolerated. Inthe review device 500, an image at the defect portion of the mask isdisplayed while a table on which the mask is placed is moved so that thedefect coordinates of defects can be observed one by one. At the sametime, judgment of the defect determination, pattern image I₃ and I₄,reference image data D₁ and optical image data D₂ used as a basis forthe determination and the reference image are arranged and displayed ona screen so that judgment, the optical image and the reference image canbe confirmed. The defect on the mask and the influence on the wafertransfer image are arranged and displayed in a review process, wherebythe determination whether or not the mask pattern should be repaired isfacilitated. In general, projection from the mask to the wafer isperformed while reduction to approximately quarter size is performed,and therefore, when images are arranged and displayed, the reductionscale is considered.

When even one defect to be repaired is confirmed in the review device500, the mask is sent to a repair device 600, which is an externaldevice of the inspection system 100 a, along with a defect informationlist 208 b. Since the repair method is different according to the typeof the defect, for example, between the extrusion and intrusion defects,the type of the defect including discrimination between the extrusionand intrusion defects and the coordinate of the defect are added to thedefect information list 208 b.

As described above, in the defect estimation device and the defectestimation method in the first aspect of Embodiment 2, the pattern imageafter being transferred from the optical image to the wafer is estimatedto be compared with the pattern image estimated from the reference imagein a similar manner, whereby the presence of defect is determined. Afterthe simulated repair of the pattern image at the portion determined as adefect, the pattern image is compared with the image as a model again,and the presence of defect is determined. Accordingly, the defect on themask, the influence of the defect on the wafer, and the degree of theimprovement by the repair can be estimated.

In the defect estimation device and the defect estimation method in thefirst aspect of Embodiment 2, although the reference image is a standardimage, it is not limited thereto. The standard image may be a referenceimage created from design data of a pattern or an optical image havingthe same pattern in a region different from the optical image which isan object on a mask.

(2) Inspection Device

An inspection device according to a second aspect of Embodiment 2 ischaracterized by including the function of the defect estimation deviceaccording to the first aspect.

FIG. 15 is a diagram showing the configuration of this inspectionsystem. The inspection system of the present Embodiment will bedescribed in connection with the inspection of masks used inphotolithography.

As shown in FIG. 15, the inspection system 100 b includes an opticalimage capture unit A and a control unit B.

The optical image capture unit A includes a light source 103, an XYθtable 102 movable in the horizontal X and Y directions and rotatable ina horizontal plane (or in a θ direction), an optical illumination system170 serving as a transmission illumination system, an enlarging opticalsystem 104, a photodiode array 105, a sensor circuit 106, a positionmeasuring system 122, and an autoloader 130.

In the control unit B, a control computer 110 which controls the entireinspection system 100 b is connected through a bus 120 (serving as adata transmission path) to a position measuring circuit 107, a comparingcircuit 302, a reference circuit 112, a pattern generating circuit 111,an autoloader control unit 113, a table control circuit 114, a storageunit 109 serving as a storage unit, a magnetic tape unit 115, a flexibledisk unit 116, a CRT 117, a pattern monitor 118, and a printer 119. TheXYθ table 102 is driven by X-, Y-, and θ-axis motors controlled by thetable control circuit 114. These motors may be, e.g., step motors.

Design pattern data which is used as reference data in die-to-databaseinspection is stored in the storage unit 109. This data is read out andsent to the pattern generating circuit 111 when necessary in the courseof the inspection process. The pattern generating circuit 111 convertsthe design pattern data into image data (or bit pattern data). Thisimage data is then sent to the reference circuit 112 for generation ofreference data.

It should be noted that the inspection system of the present Embodimentmay include, in addition to the components shown in FIG. 15 describedabove, other known components required to inspect masks. Further,although the present Embodiment is described in connection with thedie-to-database inspection method, it is to be understood that theEmbodiment may be applied to the die-to-die inspection method. In such acase, an optical image of one of two separate identical patterns on themask is treated as a reference image.

FIG. 16 is a schematic diagram showing a flow of data according to thepresent Embodiment.

As shown in FIG. 16, CAD data 201 prepared by the designer (or user) isconverted to design intermediate data 202 in a hierarchical format suchas OASIS. The design intermediate data 202 includes data of the patternformed on the mask created for each layer. It should be noted that,generally, writing apparatuses are not adapted to be able to directlyread OASIS data. That is, each manufacturer of writing apparatus usesdifferent format data. Therefore, OASIS data is converted, for eachlayer, to format data 203 in a format specific to the inspection system100 b used, and this format data 203 is input to the inspection system100 b. Although the format data 203 may be data inherent in theinspection system 100 b, the format data 203 may also be data compatiblewith a drawing device.

The format data 203 is input to the storage unit 109 of FIG. 15. Thedesign pattern data that was used to form the pattern on the photomask101 is stored in the storage unit 109.

The designed pattern includes pattern features each consisting of basicfeatures such as rectangles and triangles. The storage unit 109 storesfeature data indicating the shape, size, and position of each patternfeature, specifically, e.g., information such as the coordinates (x, y)of the reference position of each feature, the length of its sides, anda shape code (or identifier) identifying the type of shape such as arectangle or triangle.

Further, a group of pattern features defined in an area of approximatelya few tens of micrometers square, is referred to as a “cluster” or“cell”. It is common practice that the design pattern data is defined ina hierarchical structure using clusters or cells. A cluster (or cell),which contains a pattern feature or features, may be used alone orrepeated at certain intervals. In the former case the coordinatepositions of the cluster (or cell) on the photomask are specified,whereas in the latter case the coordinate positions of each copy of thecluster (or cell) are indicated together with a repetition instruction.Each cluster (or cell) is disposed in a strip-shaped region, referred toas a “frame” or “stripe”, having a width of a few hundreds ofmicrometers and a length of approximately 100 mm which corresponds tothe length of the photomask in the X or Y direction.

The pattern generating circuit 111 reads design pattern data of thephotomask 101 from the storage unit 109 through the control computer110.

Specifically, upon reading the design pattern data, the patterngenerating circuit 111 generates data of each pattern feature, andinterprets the shape code in the data indicative of the shape of thepattern feature and obtains its dimensions. The pattern generatingcircuit 111 then divides the pattern into an imaginary grid of squares(or grid elements) having predetermined quantization dimensions, andproduces 2-bit or other multiple-bit design image data of the designpattern segment in each grid element. By using the produced design imagedata, the pattern generating circuit 111 calculates the design patternoccupancy in each grid element (corresponding to a sensor pixel). Thispattern occupancy in each pixel represents the pixel value.

The design pattern data is converted into 2-bit or other multiple-bitimage data (bit pattern data). This image data is sent to the referencecircuit 112. After receiving the design image data (i.e., image data ofthe pattern), the reference circuit 112 performs appropriate filteringon the data.

FIG. 3 is a diagram illustrating the filtering.

The optical image i.e., acquired mask data 204 output from the sensorcircuit 106 is somewhat “blurred” due to the resolution characteristicsof the enlarging optical system 104 and due to the aperture effect inthe photodiode array 105, that is, this optical image is a spatiallylow-pass filtered image. Therefore, since the design image datacorresponding to the optical image is digital data consisting of digitalvalues representing the intensity (or gray scale) of each point of theimage, this design image data may be filtered to match the “blurred”optical image, or measurement data. In this way, a reference image to becompared with the optical image is produced.

Next, a method of obtaining the mask data 204 will be described usingFIGS. 15 and 4.

The optical image capture unit A shown in FIG. 15 captures mask data 204of a photomask 101. It will be noted that this optical image (acquiredmask data 204) includes an image of a pattern on the mask, this patternwas written in accordance with the corresponding design pattern data.The detailed method of capturing this optical image is as follows.

The photomask 101 serving as an inspection workpiece is mounted on theXYθ table 102 provided to be movable in two horizontal directions by X-and Y-axis motors and rotatable in a horizontal plane by a θ-axis motor.The pattern formed on the photomask 101 is then irradiated with lightemitted from the light source 103 disposed above the XYθ table 102. Morespecifically, the beam of light emitted from the light source 103 passesthrough the optical illumination system 170 and shines on the photomask101. The enlarging optical system 104, the photodiode array 105, and thesensor circuit 106 are disposed below the photomask 101. The lighttransmitted through the photomask 101 passes through the enlargingoptical system 104 and reaches the photodiode array 105, thereby formingan optical image thereon. It should be noted that the enlarging opticalsystem 104 may have its focus automatically adjusted by an autofocusmechanism (not shown). Further, though not shown, the inspection system100 a may be constructed such that light is also emitted from a sourcebelow the photomask 101, and the reflected light is passed through anenlarging optical system to a second photodiode array, thus capturingthe transmitted light and the reflected light simultaneously.

FIG. 4 is a diagram illustrating the way in which mask data 204 iscaptured.

The inspection area is divided into a plurality of strip-shapedinspection stripes 20 by imaginary lines running in the X direction,where the width of each inspection stripe 20 in the Y direction is equalto the scan width W, as shown in FIG. 4. The movement of the XYθ table102 is controlled so that each inspection stripe 20 is continuouslyscanned in the negative or positive X direction with the light tocapture an image of the inspection stripe. At that time, the photodiodearray 105 continuously generates an image (of each inspection stripe 20)having a width corresponding to the scan width W, as shown in FIG. 4.After capturing an image of the first inspection stripe 20 by scanningit, e.g., in the negative X direction, the second inspection stripe 20is continuously scanned in the positive (i.e., opposite) X direction tocapture an image of a width corresponding to the scan width W. Likewise,the third inspection stripe 20 is scanned in the negative x direction(opposite the direction in which the second inspection stripe 20 isscanned) to capture an image. This way of continuously capturing animage of one inspection stripe 20 after another reduces waste ofprocessing time.

The pattern image formed on the photodiode array 105 as shown in FIG. 15is photoelectrically converted by the array 105 and A/D (analog todigital) converted by the sensor circuit 106. The photodiode array 105is made up of sensors arranged in an array. These sensors may be, forexample, TDI (Time Delay Integration) sensors. Thus, the pattern on thephotomask 101 is imaged by these TDI sensors while the XYθ table 102 iscontinuously moved in the positive or negative X direction. It will benoted that the light source 103, the enlarging optical system 104, thephotodiode array 105, and the sensor circuit 106 together form a highpower optical inspection system.

The XYθ table 102 can be moved in the X and Y directions and rotated ina θ direction (or in an XY plane) by a drive system such as a 3-axis(X-Y-θ) motor driven by the table control circuit 114 under the controlof the control computer 110. These X-, Y-, and θ-axis motors may be,e.g., step motors. The position of the XYθ table 102 is measured by theposition measuring system 122, and the measurement data is sent to theposition measuring circuit 107. Further, the photomask 101 isautomatically loaded onto the XYθ table 102 from the autoloader 130driven by the autoloader control unit 113, and, upon completion of itsinspection, the photomask 101 is automatically retrieved from the XYθtable 102.

As shown in FIGS. 15 and 16, the optical image data D₂ output from thesensor circuit 106 is sent to the simulator 700. The reference imagedata D₁ generated in the reference circuit 112 is also sent to thesimulator 700. A portion surrounded by a dot line in FIG. 16 is aportion having the defect estimation function described in the firstaspect.

The simulator 700 estimates a pattern image to be transferred from themask to the wafer, using the reference image data D₁ and the opticalimage data D₂. The pattern image may be a resist pattern image at anystage in a series of a lithography process such as development andetching or may be a circuit pattern image finally formed in the wafer.The wafer is an example of a substrate in this invention.

For example, a photo mask formed with a predetermined circuit pattern isa test object. The photo mask is used for transferring the circuitpattern onto a wafer. The transfer is performed by the followingprocess, for example. First, a resist film is provided on the wafer.Next, the wafer is exposed by an exposure device through the photo maskto transfer an exposure image of the circuit pattern to the resist film.Then, the resist film is developed to form a resist pattern. Thereafter,a lower film is etched using the resist pattern as a mask, and afterthat, the resist film is peeled. Consequently, the lower film can beprocessed to a pattern having a desired shape. Next, copper (Cu) or thelike is filled in a recess of the lower film, and thereafter, anunnecessary portion is removed by a CMP (Chemical MechanicalPlanarization) method, whereby a wiring pattern is formed.

In the above example, the simulator 700 can estimate the exposure imageto be transferred from the mask to the wafer by the exposure device, forexample, and can also estimate a resist pattern image to be formed onthe wafer. Alternatively, the simulator 700 can estimate a pattern imageof the recess to be formed in the lower film and a wiring pattern imageafter having been filled with copper and the like. These pattern imagesinclude a pattern image I₁ estimated from the reference image data D₁and a pattern image I₂ estimated from the optical image data D₂. In thepresent Embodiment, images estimated by the simulator 700, that is, theexposure image transferred from the mask to the wafer by the exposureimage, the resist pattern image formed on the wafer, the wiring patternimage, and so on are collectively referred to as pattern images and areestimated from the reference image data D₁ and the optical image dataD₂.

The pattern images I₁ and I₂ estimated by the simulator 700 are sent tothe comparing circuit 302 along with data output from the positionmeasuring circuit 107 showing the position of the photomask 101 on theXYθ table 102.

In the comparing circuit 302, the pattern image I₁ estimated from thereference image data D₁ and the pattern image I₂ estimated from theoptical image data D₂ are compared with each other using the appropriatecomparative determination algorithm. For example, when a defect afteretching is estimated, the information of the patterns after etching tobe described respectively in the pattern images I₁ and I₂ are compared,and when the difference between the positions of the corresponding sidesis more than a predetermined level, for example, 4 nm, it is regardedthat there is a defect. As the result of the comparison, when it isdetermined that there is a defect, the coordinate and the pattern imagesI₁ and I₂ as the basis for the defect determination are stored in thecomparing circuit 302.

With regard to the portion determined as a defect based on the patternimages I₁ and I₂, the reference image data D₁ of the mask at thecorresponding position and the optical image data D₂ are sent to thesimulated repair circuit 303. In the simulated repair circuit 303,simulated repair is applied to the defect portion sent to the simulatedrepair circuit 303. The simulated repair is performed as follows. Thereference image data D₁ of the mask and the optical image data D₂ arecompared with each other, and different positions are found around theposition estimated as a defect. The optical information at the differentposition is replaced with the corresponding optical information of theoptical image data D₂. For example, the information of the defectportion denoted by the reference numeral 10 in FIG. 9 a is replaced withthe information of the defect portion denoted by the reference numerals701 and 702 in FIG. 7 b. At that time, when there are a plurality ofdefects in the pattern image I₂, a plurality of times of simulatedrepair are performed changing the repaired portion.

For example, if the repair of a defect portion can restore the wafertransfer image to a normal state, then in the repair process we shouldonly be concerned with this specific portion. On the other hand, if anindividual defect portion is repaired but the wafer optical image cannotbe restored to a normal state then a combination of two portions is tobe repaired. If any of the above combinations do not restore the wafertransfer image to a normal state then a combination of three portionsare repaired. Furthermore, any combination of portions exceeding thisnumber can be utilized in any combination to restore the wafer transferimage to its normal state.

When contiguous defect coordinates are stored as optical image data D₂in the comparing circuit 302, in the simulated repair circuit 303,simulated repair is performed for each region including the defects.That is to say, the repair to the optical image data D₂ including alldefects in a predetermined range is simulated.

The simulated optical image data D₂ as new optical image data D₂′ isreturned to the simulator 700 again. In the simulator 700, a new patternimage I₃ is estimated from the reference image data D₁ as a model, and anew pattern image I₄ is also estimated from the simulated optical imagedata D₂′. When a plurality of times of simulated repair are performedchanging the defect portion to be repaired, a plurality of the newpattern images I₄ estimated from the repaired optical image data D₂′ areobtained.

The pattern images I₃ and I₄ may be at the same stage of the lithographyprocess as the pattern image I₁ and I₂ or may be in the more advancedstate than the pattern image I₁ and I₂. For example, all the patternimages I₁, I₂, I₃ and I₄ may be exposure images transferred from themask to the wafer by the exposure device. When the pattern images I₁ andI₂ are resist pattern images formed on the wafer, the pattern images I₃and I₄ may be wiring pattern images formed on the wafer.

The pattern images I₃ and I₄ newly estimated by the simulator 700 aresent from the simulator 700 to the comparing circuit 302 again. Thepattern image I₃ as a model and the pattern image I₄ after simulatedrepair are compared with each other, whereby confirmation can be made asto whether or not the initially indicated defect on the wafer iseliminated. As the result of the comparison, the coordinate determinedas a defect and the pattern images I₃ and I₄ as the basis for the defectdetermination are sent as the defect information list 208 a to thereview device 500, which is an external device of the inspection device,along with the reference image data D₁ and the optical image data D₂.

All defects detected by the inspection device 100 b are discriminated inthe review device 500. However, when the defect detected in the wafertransfer image is minor, the defect may be removed from an object to bereviewed by pre-processing.

In this review process, the operator determines whether a pattern defectfound in the inspection can be tolerated. In the review device 500, animage at the defect portion of the mask is displayed while a table onwhich the mask is placed is moved so that the defect coordinates ofdefects can be observed one by one. At the same time, the judgment ofthe defect determination, the optical image as a basis for thedetermination and the reference image are arranged and displayed on ascreen so that the determined condition, the optical image and thereference image can be confirmed. The defect on the mask and theinfluence on the wafer transfer image are arranged and displayed in areview process, whereby the determination whether or not the maskpattern should be repaired is facilitated. In general, projection fromthe mask to the wafer is performed while reduction to approximatelyquarter size is performed, and therefore, when images are arranged anddisplayed, the reduction scale is considered.

The discriminated defect information is returned to the inspectionsystem 100 b and stored in the storage unit 109. When even one defect tobe repaired is confirmed in the review device 500, the mask is sent to arepair device 600, which is an external device of the inspection system100 a, along with a defect information list 208 b. Since the repairmethod is different according to the type of the defect, that is,between the extrusion and intrusion defects, the type of the defectincluding discrimination between the extrusion and intrusion defects andthe coordinate of the defect are added to the defect information list208 b.

In a second aspect of the second Embodiment, the inspection system 100 bitself may have the review function. In this case, the mask inspectionresults 205 and the transfer image inspection results 206 are displayedas images with incidental information of the defect determination on thescreen of the control Computer 110 or a screen of a separately providedcalculator. The image of the mask defect portion is displayed using anoptical observation system image of the inspection system 100 a.

As described above, in the inspection device according to the secondaspect of Embodiment 2, the pattern image after being transferred fromthe optical image to the wafer is estimated to be compared with thepattern image estimated from the reference image in a similar manner,whereby the presence of a defect is determined. After the simulatedrepair of the pattern image at the portion determined as a defect, thepattern image is compared with the image as a model again, and thepresence of defect is determined. As a result, the defect on the mask,the influence of the defect on the wafer, and the degree of theimprovement by the repair can be estimated. Accordingly, according tothe inspection system and the inspection method of the presentEmbodiment, the degree of influence of the mask defect on the wafer andthe portion of the pattern on the mask to be repaired for eliminatingthe detected defect can be determined.

The inspection system in the second aspect of Embodiment 2 is notlimited to the above-mentioned example as shown in FIG. 15 and may berepaired without departing from the spirit and scope of the presentinvention.

In this case, Unit A of the optical image data apparatus as shown inFIG. 15 can utilize an irradiating laser beam light source 103. However,optical image data can also be acquired using an electron beam. Forexample, the inspection apparatus can use SEM (Scanning ElectronMicroscope) or MEM (Mirror Electron Microscope).

The inspection apparatus as shown in FIG. 22 is an example of aninspection apparatus utilizing SEM technique. The individual componentnumbers are the same as for FIG. 15 with the exception of Unit A.

In the example of FIG. 22 the electron beam from the electron gun 40 isfocused by the condenser lens 41 and then irradiated to the mask 39placed on the stage 43. The movement of the scanning line and scanningspeed on the mask 39 are controlled by the scanning coil 45. After theelectron beam is irradiated on the mask 39 the reflected electron beamis guided to the detector 42. The output signal from the detector 42 isamplified by the sensor (not shown), then converted to digital data,this signal is then sent to the simulator 700.

FIG. 23 is another example using MEM to acquire optical image data as inunit A of FIG. 15. The individual component numbers are the same as inFIG. 15 with the exception of Unit A.

In FIG. 23 the mask 53 is placed on an insulated material 60 on thestage 55. The electron beam from the electron beam gun 50 is focused bythe condenser lens 51, then deflected by the ExB deflector 52, after,the electron beam passes through the objective lens 54 forming anexpanded beam which reaches the mask 53 vertically. After the electronbeam is irradiated on the mask 53 the reflected beam is transmittedthrough the objective lens 54 to the focus lens 56 and is then projectedon to the fluorescent screen 57. The optical image on the fluorescentscreen 57 is focused on the received light plate of CCD 59 by an opticallens 58. Then, the image of pattern focused on the CCD 59 is transformedto digital data and sent to the simulator 700.

(3) Defect Estimation Device and Defect Estimation Method

A defect estimation device and a defect estimation method according to athird aspect of the Embodiment 2 will be described with reference toFIG. 17. A portion surrounded by a dot line in FIG. 13 is a main portionconstituting the defect estimation device.

The defect estimation device has a first simulator 401, a firstcomparing circuit 402, a simulated repair circuit 403, a secondsimulator 404, and a second comparing circuit 405. The first simulator401 estimates a first pattern image, and the second simulator 404estimates a second pattern image. In the second pattern image, thelithography process is more advanced than that in the first patternimage. That is to say, since only the simulator 700 is provided in theEmbodiment 1, calculation processing performed before and after thesimulated repair is basically the same. On the other hand, in thepresent Embodiment, since two simulators are provided, the presentEmbodiment is characterized in that the processing methods aredifferent.

The reference image data D₁ and the optical image data D₂ are input tothe first simulator 401. This data can be generated in the inspectiondevice as described in the Embodiment 2.

The first simulator 401 estimates first pattern images I₅ and I₆ usingthe input reference image data D₁ and optical image data D₂.

For example, a photo mask formed with a predetermined circuit pattern isa test object. The photo mask is used for transferring the circuitpattern onto a wafer. The transfer is performed by the followingprocess, for example. First, a resist film is provided on the wafer.Next, the wafer is exposed by an exposure device through the photo maskto transfer an exposure image of the circuit pattern to the resist film.Then, the resist film is developed to form a resist pattern. Thereafter,a lower film is etched using the resist pattern as a mask, and afterthat, the resist film is peeled. Consequently, the lower film can beprocessed to a pattern having a desired shape. Next, copper (Cu) or thelike is filled in a recess of the lower film, and thereafter, anunnecessary portion is removed by a CMP (Chemical MechanicalPlanarization) method, whereby a wiring pattern is formed.

In the above example, the first simulator 401 can estimate the exposureimage of a wiring pattern image to be transferred on to the wafer, forexample, these exposure images include a pattern image I₅ estimated fromthe reference image data D₁ and a pattern image I_(s) estimated from theoptical image data D₂.

The first pattern images I_(s) and I₅ estimated by the first simulator401 are sent to the first comparing circuit 402. In the first comparingcircuit 402, the pattern image I₅ as a model estimated from thereference image data D₁ and the pattern image I₆ estimated from theoptical image data D₂ are compared with each other using the appropriatecomparative determination algorithm. For example, in a pattern after CMPprocessing, the simulation of CMP itself is similar to that in theexample of etching, and the information described respectively inobtained pattern images are compared. When the difference between thepositions of the corresponding sides is more than a predetermined level,for example, 4 nm, it is regarded that there is a defect. As the resultof the comparison, when it is determined that there is a defect, thecoordinate and the first pattern images I₅ and I₆ as the basis for thedefect determination are stored in the first comparing circuit 402.

With regard to the portion determined as a defect based on the firstpattern images I_(s) and I₆, the reference image data D₁ of the mask atthe corresponding position and the optical image data D₂ are sent fromthe first comparing circuit 402 to the simulated repair circuit 403. Inthe simulated repair circuit 403, simulated repair is applied to thedefect portion sent to the simulated repair circuit 403. The simulatedrepair is performed as follows. The reference image data D₁ of the maskand the optical image data D₂ of the mask are compared, and differentpositions are found around the position estimated as a defect. Theoptical information at the different position is replaced with thecorresponding optical information of the reference image. For example,the information of the defect portion denoted by the reference numeral10 in FIG. 9 a is replaced with the information of the defect portiondenoted by the reference numerals 701 and 702 in FIG. 7 b. When thereare a plurality of defects in the pattern image I₆, the repaired portionis changed, and a plurality of times of simulated repair are performedwhile changing the repaired portion, whereby a defect that will cause apattern error can be specified.

For example, if the repair of a defect portion can restore the wafertransfer image to a normal state, then in the repair process we shouldonly be concerned with this specific portion. On the other hand, if anindividual defect portion is repaired but the wafer optical image cannotbe restored to a normal state then a combination of two portions is tobe repaired. If any of the above combinations do not restore the wafertransfer image to a normal state then a combination of three portionsare repaired. Furthermore, any combination of portions exceeding thisnumber can be utilized in any combination to restore the wafer transferimage to its normal state.

When contiguous defect coordinates as optical image data D₂ are storedin the first comparing circuit 402, in the simulated repair circuit 403,simulated repair is performed for each region including the defects.That is to say, the repair of the optical image data D₂ including alldefects in a predetermined range is simulated. Ina pattern establishedby a combination of a plurality of patterns, the constituent patternsinfluence each other to be transferred as one pattern on a wafer. Thus,also when repair of a simulated pattern image is estimated, repair ofthe mutual influence between a plurality of defect portions should beconsidered. This is because, when the pattern image is estimated foreach defect, a real pattern image is not estimated.

The simulated optical image data D₂ is sent as the optical image dataD₂′ to the second simulator 404. In the second simulator 404, a secondpattern image I₇ is newly estimated from the reference image data D₁ asa model, and a second pattern image I₈ is also estimated from theoptical image data D₂′. When a plurality of times of simulated repairare performed changing the defect portion to be repaired, a plurality ofthe second pattern images I₈ estimated from the repaired optical imagedata D₂′ are obtained.

The second pattern images I₇ and I₈ are in the more advanced state thanthe first pattern images I₅ and I₆. For example, when the first patternimages I₈ and I₆ are exposure images of a circuit pattern transferredonto a wafer, the second pattern images I₇ and I₈ may be resist patternimages at any stage in a series of a lithography process such asdevelopment and etching or may be circuit pattern images finally formedin a wafer. The circuit pattern may be any of circuit patterns beforeand after the CMP processing.

A specific stage of the second pattern images I₇ and I₈ in thelithography process can be suitably selected according to the process.

For example, in the etching processing of a wiring material using aresist pattern as a mask, dimensional variation due to a microloadingeffect may occur. The dimensional variation increases as a densitydifference in of a circuit pattern increases. This is because there is avariation between a region where a circuit pattern to be formed on awafer is dense and a region where the circuit pattern is sparse, alarger number of active species required for etching are inhibited in aregion where the circuit pattern is sparse, whereas less active speciesare required if the circuit pattern is dense. Therefore, a circuitpattern having a desired dimension (determined by pattern data as abasis) cannot be obtained. That is to say, in the region where a circuitpattern to be formed on the wafer is sparse, the dimension of thepattern formed by etching is larger than a desired pattern dimension.Meanwhile, in the region where the circuit pattern to be formed on thewafer is dense, the dimension of the pattern formed by etching issmaller than the desired pattern dimension.

To solve the above problem, a correction processing for pattern data isperformed over all minute sections in the circuit pattern. Consequently,although the pattern dimension after development processing deviatesfrom a desired dimension, the pattern after etching has a desireddimension. Thus, in this example, if the second pattern image estimatedby the second simulator 404 is a resist pattern image after development,all patterns may be possibly judged as defects. However, if the secondpattern image is a resist pattern image after etching or a wiringpattern image, the presence of a defect can be accurately determined.

The second pattern images I₇ and I₈ estimated by the second simulator404 are sent to the second comparing circuit 405. In the secondcomparing circuit 405, the second pattern image I₇ as a model and thesecond pattern image I₈ estimated from the optical image data D₂′ aftersimulated repair are compared with each other, whereby confirmation canbe made as to whether or not the initially indicated defect on the waferis eliminated. As the result of the comparison, the coordinatedetermined as a defect and the second pattern images I₇ and I₈ as thebasis for the defect determination are output as a defect informationlist 209 to an external device along with the reference image data D₁and the optical image data D₂.

The second comparing circuit 405 may not be provided in the defectestimation device according to the third aspect of the Embodiment 2. Inthis case, the defect estimation device outputs the second patternimages I₇ and I₈ estimated by the second simulator 404, the referenceimage data D₁, and the optical image data D₂ to an external device. Whenthe external device is an inspection device, the inspection devicereceives the above data from the defect estimation device and, in theinternal comparing circuit, compares the second pattern image I₇ as amodel with the second pattern image I₈ estimated from the optical imagedata D₂′ after simulated repair. As a result, it can be confirmedwhether or not the initially indicated defect on the wafer is eliminatedin the defect estimation device.

As shown in FIG. 17, the defect information list 209 is sent to thereview device 500. In the review device 500, an image at the defectportion of the mask is displayed while a table on which the mask isplaced is moved so that the defect coordinates of defects can beobserved one by one. At the same time, the condition of the defectdetermination, second pattern image I₇ and I₈, reference image data D₁and optical image data D₂ as a basis for the determination, are arrangedand displayed on a screen so that the judgment, the optical image andthe reference image can be confirmed. The defect on the mask and theinfluence on the wafer transfer image are arranged and displayed in areview process, whereby the determination whether or not the maskpattern should be repaired is facilitated. In general, projection fromthe mask to the wafer is performed while reduction to approximatelyquarter size is performed, and therefore, when images are arranged anddisplayed, the reduction scale is considered.

When even one defect to be repaired is confirmed in the review device500, the mask is sent to a repair device 600, which is an externaldevice of the inspection system 100 a, along with a defect informationlist 208 b. Since the repair method is different according to the typeof the defect, that is, between the extrusion and intrusion defects, thetype of the defect including discrimination between the extrusion andintrusion defects and the coordinate of the defect are added to thedefect information list 208 b.

As described above, in the defect estimation device and the defectestimation method in the third aspect of Embodiment 2, the pattern imageafter being transferred from the optical image to the wafer is estimatedto be compared with the pattern image estimated from the reference imagein a similar manner, whereby the presence of defect is determined. Afterthe simulated repair of the pattern image at the portion determined as adefect, the pattern image is compared with the image as a model again,and the presence of defect is determined. As a result, the defect on themask, the influence of the defect on the wafer, and the degree of theimprovement by the repair can be estimated.

Since the initial simulation is performed simply, the entire calculationprocessing can be increased in speed.

In the defect estimation device and the defect estimation method in thethird aspect of the Embodiment 2, although the reference image is astandard image, it is not limited thereto. That is to say, the standardimage may be a reference image created from design data of a pattern oran optical image having the same pattern in a region different from theoptical image which is an object on a mask.

(2) Inspection System

An inspection device according to a fourth aspect of the Embodiment 2 ischaracterized by including the function of the defect estimation deviceaccording to the third aspect.

FIG. 18 is a diagram showing the configuration of this inspection systemaccording to the fourth aspect of Embodiment 2. As shown in FIG. 18,inspection system 100 c has an optical image capture unit A and acontrol unit B. In FIG. 18, the same components as those in FIG. 15 aredenoted by the same reference numerals, and therefore, the descriptionwill not be repeated here. It should be noted that the inspection systemof the present Embodiment may include, in addition to the componentsshown in FIG. 18 described above, other known components required toinspect masks. Further, although the present Embodiment is described inconnection with the die-to-database inspection method, it is to beunderstood that the Embodiment may be applied to the die-to-dieinspection method. In such a case, an optical image of one of twoseparate identical patterns on the mask is treated as a reference image.

FIG. 19 is a schematic diagram showing a flow of data according to thepresent Embodiment.

As shown in FIG. 19, CAD data 201 prepared by the designer (or user) isconverted to design intermediate data 202 in a hierarchical format suchas OASIS. The design intermediate data 202 includes data of the patternformed on the mask created for each layer. It should be noted that,generally, writing apparatuses are not adapted to be able to directlyread OASIS data. That is, each manufacturer of writing apparatus usesdifferent format data. Therefore, OASIS data is converted, for eachlayer, to format data 203 in a format specific to the inspection system100 c used, and this format data 203 is input to the inspection system100 c. Although the format data 203 may be data inherent in theinspection system 100 c, the format data 203 may also be data compatiblewith a drawing device.

The format data 203 is input to the storage unit 109 of FIG. 18. Thepattern generating circuit 111 reads the format data 203 from thestorage unit 109 through the control computer 110.

Specifically, upon reading the design pattern data, the patterngenerating circuit 111 generates data of each pattern feature, andinterprets the shape code in the data indicative of the shape of thepattern feature and obtains its dimensions. The pattern generatingcircuit 111 then divides the pattern into an imaginary grid of squares(or grid elements) having predetermined quantization dimensions, andproduces 2-bit or other multiple-bit design image data of the designpattern segment in each grid element. By using the produced design imagedata, the pattern generating circuit 111 calculates the design patternoccupancy in each grid element (corresponding to a sensor pixel). Thispattern occupancy in each pixel represents the pixel value.

The design pattern data is converted into 2-bit or other multiple-bitimage data (bit pattern data). This image data is sent to the referencecircuit 112. After receiving the design image data (i.e., image data ofthe pattern), the reference circuit 112 performs appropriate filteringon the data.

As shown in FIGS. 18 and 19, the optical image data D₂ output from thesensor circuit 106 is sent to the first simulator 401. The referenceimage data D₁ generated in the reference circuit 112 is also sent to thefirst simulator 401. A portion surrounded by a dot line in FIG. 19 is aportion having the defect estimation function described in theEmbodiment 3.

The first simulator 401 estimates a first pattern image using thereference image data D₁ and the optical image data D₂.

For example, a photo mask formed with a predetermined circuit pattern isa test object. The photo mask is used for transferring a pattern onto awafer. The transfer is performed by the following process, for example.First, a resist film is provided on the wafer. Next, the wafer isexposed by an exposure device through the photo mask to transfer anexposure image of the circuit pattern to the resist film. Then, theresist film is developed to form a resist pattern. Thereafter, a lowerfilm is etched using the resist pattern as a mask, and after that, theresist film is peeled. Consequently, the lower film can be processed toa pattern having a desired shape. Next, copper (Cu) or the like isfilled in a recess of the lower film, and thereafter, an unnecessaryportion is removed by a CMP (Chemical Mechanical Planarization) method,whereby a wiring pattern is formed.

In the above example, the first simulator 401 can estimate an exposureimage of a circuit pattern transferred as a first pattern image onto awafer. The pattern image includes the pattern image I₅ estimated fromthe reference image data D₁ and the pattern image I₆ estimated from theoptical image data D₂.

The first pattern images I₅ and I₆ estimated by the first simulator 401are sent to the first comparing circuit 402. In the first comparingcircuit 402, the first pattern image I₅ as a model estimated from thereference image data D₁ and the first pattern image I₆ estimated fromthe optical image data D₂ are compared with each other using theappropriate comparative determination algorithm. For example, when aresist pattern after etching is estimated as the first pattern image,the information of the patterns described respectively in the firstpattern images I₅ and I₆ obtained in the simulation are compared. Whenthe difference between the positions of the corresponding sides is morethan a predetermined level, for example, 4 nm, it is regarded that thereis a defect. As the result of the comparison, when it is determined thatthe defect occurs, the coordinate and the first pattern images I₅ and I₆as the basis for the defect determination are stored in the firstcomparing circuit 402.

With regard to the portion determined as a defect based on the firstpattern images I₅ and I₆, the reference image data D₁ of thecorresponding mask and the optical image data D₂ are sent to thesimulated repair circuit 403. In the simulated repair circuit 403,simulated repair is applied to the defect portion sent to the simulatedrepair circuit 403. The simulated repair is performed as follows. Thereference image data D₁ and the optical image data D₂ are compared, anddifferent positions are found around the position estimated as a defect.The optical information at the different position is replaced with thecorresponding optical information of the reference image data D₁. Forexample, the information denoted by the reference numeral 10 in FIG. 9 ais replaced with the information indicated by the reference numerals 701and 702 in FIG. 7 b. At that time, when there are a plurality of defectsin the first pattern image I₆, the repaired portion is changed, and aplurality of times of simulated repair are performed.

For example, if the repair of a defect portion can restore the wafertransfer image to a normal state, then in the repair process we shouldonly be concerned with this specific portion. On the other hand, if anindividual defect portion is repaired but the wafer optical image cannotbe restored to a normal state then a combination of two portions is tobe repaired. If any of the above combinations do not restore the wafertransfer image to a normal state then a combination of three portionsare repaired. Furthermore, any combination of portions exceeding thisnumber can be utilized in any combination to restore the wafer transferimage to its normal state.

When contiguous defect coordinates as the different first pattern imageI₆ are stored in the first comparing circuit 402, in the simulatedrepair circuit 403, simulated repair is performed for each regionincluding the defects. That is to say, repair to the different firstpattern image I₆ including all defects in a predetermined range issimulated. In a pattern established by a combination of a plurality ofpatterns, the constituent patterns influence each other to betransferred as one pattern on a wafer. Thus, also when a repair of asimulated pattern image is estimated, the mutual influence between aplurality of defect portions should be considered. This is because, whenthe pattern image is estimated for each defect, a real pattern image isnot estimated.

The simulated repair of optical image data D₂ is sent as the opticalimage data D₂′ to the second simulator 404. In the second simulator 404,a second pattern image I₇ is newly estimated from the reference imagedata D₁ as a model, and a second pattern image I₈ is also estimated fromthe simulated optical image data D₂′. When a plurality of times ofsimulated repair are performed changing the defect portion to berepaired, a plurality of the second pattern images I₈ estimated from therepaired optical image data D₂′ are obtained.

The second pattern images I₇ and I₈ are in the more advanced state thanthe first pattern images I₅ and I₆. For example, when the first patternimages I₅ and I₆ are exposure images of a circuit pattern transferredonto a wafer, the second pattern images I₇ and I₈ may be resist patternimages at any stage in a series of a lithography process such asdevelopment and etching or may be circuit pattern images finally formedin a wafer. The circuit pattern may be any of circuit patterns beforeand after the CMP processing.

A specific stage of the second pattern images I₇ and I₈ in thelithography process can be suitably selected according to the process.

For example, in the etching processing of a wiring material using aresist pattern as a mask, dimensional variation due to a microloadingeffect may occur. The dimensional variation increases as a densitydifference in a circuit pattern increases. This is because, between aregion where a circuit pattern to be formed on a wafer is dense and aregion where the circuit pattern is sparse, in the latter region alarger number of active species required for etching are inhibited.Consequently, the density of the circuit pattern required for a circuitpattern having a desired dimension (determined by pattern data as abasis) cannot be obtained. That is to say, in the region where a circuitpattern to be formed on the wafer is sparse, the dimension of thepattern formed by etching is larger than a desired pattern dimension.Meanwhile, in the region where the circuit pattern to be formed on thewafer is dense, the dimension of the pattern formed by etching issmaller than the desired pattern dimension.

To solve the above problem, correction processing for pattern data isperformed over all minute sections in the circuit pattern. Consequently,although the pattern dimension after development processing deviatesfrom a desired dimension, the pattern after etching has a desireddimension. Thus, in this example, if the second pattern image estimatedby the second simulator 404 is a resist pattern image after development,all patterns may be possibly judged as defects. However, if the secondpattern image is a resist pattern image after etching or a wiringpattern image, the presence of a defect can be accurately determined.

The second pattern images I₇ and I₈ estimated by the second simulator404 are sent to the second comparing circuit 405. In the secondcomparing circuit 405, the second pattern image I₇ as a model and thesecond pattern image I₈ estimated from the optical image data D₂′ aftersimulated repair are compared with each other, whereby confirmation canbe made as to whether or not the initially indicated defect on the waferis eliminated. As the result of the comparison, the coordinatedetermined as a defect and the second pattern images I₇ and I₈ as thebasis for the defect determination are output as a defect informationlist 209 to an external device along with the reference image data D₁and the optical image data D₂.

As shown in FIG. 19, the defect information list 209 is sent to thereview device 500. In the review device 500, an image at the defectportion of the mask is displayed while a table on which the mask isplaced is moved so that the defect coordinates of defects can beobserved one by one. At the same time, judgment of the defectdetermination, second pattern image I₇ and I₈, reference image data D₁and optical image data D₂ as a basis for the determination, are arrangedand displayed on a screen so that the judgment, the optical image andthe reference image can be confirmed. The defect on the mask and theinfluence on the wafer transfer image are arranged and displayed in areview process, whereby the determination whether or not the maskpattern should be repaired is facilitated. In general, projection fromthe mask to the wafer is performed while reduction to approximatelyquarter size is performed, and therefore, when images are arranged anddisplayed, the reduction scale is considered.

All defects detected by the inspection system 100 c are discriminated inthe review device 500. However, when the defect detected in the wafertransfer image is minor, the defect may be removed from an object to bereviewed by pre-processing.

The discriminated defect information is returned to the inspectionsystem 100 c and stored in the storage unit 109. When even one defect tobe repaired is confirmed in the review device 500, the mask is sent to arepair device 600, which is an external device of the inspection system100 c, along with a defect information list 210. Since the repair methodis different according to the type of the defect, that is, between theextrusion and intrusion defects, the type of the defect includingdiscrimination between the extrusion and intrusion defects and thecoordinate of the defect are added to the defect information list 210.

In the fourth aspect of Embodiment 2, the inspection system 100 c itselfmay have the review function. In this case, the mask inspection results205 and the transfer image inspection results 206 are displayed asimages with incidental information of the defect determination on thescreen of the control computer 110 or a screen of a separately providedcalculator. The image of the mask defect portion is displayed using anoptical observation system image of the inspection system 100 c.

The inspection system in the fourth aspect of Embodiment 2 is notlimited to the above-mentioned example of FIG. 18 and may be repairedwithout departing from the spirit and scope of the present invention.

In this case, Unit A of the optical image data apparatus as shown inFIG. 18 can utilize an irradiating laser beam light source 103 However,optical image data can also be acquired using an electron beam. Forexample, the inspection apparatus can use SEM (Scanning ElectronMicroscope) or MEM (Mirror Electron Microscope).

The inspection apparatus as shown in FIG. 24 is an example of aninspection apparatus utilizing SEM technique. The individual componentnumbers are the same as for FIG. 18 with the exception of Unit A.

In FIG. 24 the electron beam from the electron gun 40 is focused by thecondenser lens 41 and then irradiated to the mask 39 placed on the stage43. The movement of the scanning line and scanning speed on the mask iscontrolled by the scanning coil 45. After the electron is irradiated onthe mask the reflected electron beam is guided to the detector 42. Theoutput signal from the detector is amplified by the sensor (not shown)then converted to digital data, this signal is then sent to the firstsimulator 401.

FIG. 25 is another example using MEM to acquire optical Image data as inFIG. 18. The individual component numbers are the same as in FIG. 18with the exception of Unit A.

In FIG. 25, the mask 53 is placed on an insulated material 60 on thestage 55. The electron beam from the electron beam gun 50 is focused bythe condenser lens 51, then deflected by the ExB deflector 52, after,the electron beam passes through the objective lens 54 forming anexpanded beam which reaches the mask 53 vertically. After the electronbeam is irradiated on the mask 53 the reflected beam is transmittedthrough the objective lens 54 to the focus lens 56 and is then projectedon to the fluorescent screen 57. The optical image on the fluorescentscreen 57 is focused on the received light plate of CCD 59 by opticallens 58. Then, the image of pattern focused on the CCD 59 is transformedinto digital data, which is sent to the first simulator 401.

As described above, in the inspection device according to the fourthaspect of the Embodiment 2, a pattern image after being transferred fromthe optical image to the wafer is estimated, and the pattern image iscompared with the pattern image estimated from the reference image in asimilar manner, whereby the presence of a defect is determined. Afterthe simulated repair of the pattern image at the portion determined as adefect, the pattern image is compared with the image as a model again,and the presence of a defect is determined. Consequently, the defect onthe mask, the influence of the defect on the wafer, and the degree ofthe improvement by the repair can be estimated. Thus, according to theinspection device and the inspection method of the present Embodiment,the level of the influence of the mask shape defect itself on the waferand a portion of the pattern on the mask to be repaired for eliminatinga detected defect can be indicated.

Further, the initial simulation is stopped at the previous stage of thelithography process relative to the later simulation, and therefore, incomparison with a case where simulation at the same stage as the latersimulation is performed also in the previous simulation, the entirecalculation processing associated with the defect estimation can beincreased in speed.

FIG. 10 is a screen through which an operator browses the results of thedefect determination based on the wafer transfer image and the resistimage. The upper stage is a reference image or an optical image on themodel side in the inspection using a die-to-die comparison method. Thelower stage is an optical image on the test object side including thedefect. In each stage, the images are (1) an image taken by atransmission optical system of the inspection device, (2) an image takenby a reflection optical system of the inspection device, (3) a maskimage estimated from these images, (4) a wafer transfer image obtainedby simulating and estimating exposure conditions based on the maskimage, and (5) a resist image obtained by simulating and estimatingcharacteristics of resist in sequence from the left of FIG. 10.

According to the review screen shown in FIG. 10, since the referenceimage, the optical image, and the transfer image estimated from them arearranged and displayed, the operator compares these images and cannarrow down a defect to be reviewed.

FIG. 11 shows another example of the review screen in the inspectiondevice. The screen is constituted of, for example, a window, throughwhich the reference image as the basis for the defect determination andthe optical image including the defect are displayed so that theoperator can compare the reference image and the optical image, and awindow through which the defect distribution in the inspection range onthe mask is displayed. There may be further provided with a profilescreen window through which a difference between the optical image andthe reference image is displayed, the brightness of each pixel of theoptical image and the reference image are dumped and displayed withnumeric values, and the sensor brightness is displayed when sectioned bythe x and y axes for the purpose of analyzing the defect.

The features and advantages of the Embodiment 2 may be summarized asfollows.

According to the Embodiment 2, a defect estimation device is provided,which can estimate a defect on a mask, the influence of the defect on asubstrate, and the degree of the improvement by repair.

According to the Embodiment 2, a defect estimation device is provided,which can estimate a defect on a mask, the influence of the defect on asubstrate, and the degree of the improvement by repair and can increasethe speed of the entire calculation process.

According to the Embodiment 2, a defect estimation method is provided,which can estimate a defect on a mask, the influence of the defect on asubstrate, and the degree of the improvement by repair.

According to the Embodiment 2, an inspection device is provided, whichcan estimate a defect on a mask, the influence of the defect on asubstrate, and the degree of the improvement by repair and therefore canindicate the level of the influence of the mask defect itself on asubstrate and a portion of the pattern on the mask to be repaired foreliminating a detected defect.

According to the Embodiment 2, an inspection device is provided whichcan indicate the level of the influence of a mask defect itself on asubstrate and a portion of the pattern on the mask to be repaired foreliminating a detected defect and can increase the speed of calculationprocessing associated with defect estimation.

The Embodiment 2 is not limited to the above-mentioned aspects and maybe repaired without departing from the spirit and scope of the presentinvention.

In the above example, when a defect is estimated initially, simulationof an optical image obtained by transferring a pattern on a mask as atarget by an exposure device is performed first. However, this inventionis not limited to the example. For example, first, the reference imagedata D₁ of the mask as a target and the optical image data D₂ arecompared. Candidates of a defect are estimated from the result of thecomparison, and simulation may be performed. In this case, after thedefect candidates are extracted, for the defect candidates, simulationof an optical image obtained by being transferred by an exposure deviceis performed, and if necessary, the subsequent simulation is performed.

By doing this, defect candidates are further narrowed down, andthereafter, simulated repair may be performed. This can reduce thenumber of times of simulation requiring a long calculation time to onetime.

The above description of the aspects of the Embodiment 2 has notspecified apparatus constructions, control methods, etc. which are notessential to the description of the invention, since any suitableapparatus constructions, control methods, etc. can be employed toimplement the invention. Further, the scope of this inventionencompasses all estimation devices and methods, pattern inspectionsystems and pattern inspection methods employing the elements of theinvention and variations thereof which can be designed by those skilledin the art.

What is claimed is:
 1. A defect estimation device comprising: a firstacquiring part which obtains a reference image and an optical image of apattern formed on a mask; a first estimation part which utilizes theimages obtained in the first acquiring part, and estimates first imagesof first transfer patterns obtained by transferring the optical andreference images onto a substrate by a first lithography process; afirst comparison part which compares the first images with each otherand when a difference exceeds at least one of a plurality of thresholdvalues, determines that there is a defect in the optical image of thepattern formed on the mask; a simulation repair part which simulates arepair to the optical image of the pattern at a portion determined asdefective by the first comparison part; a second estimation part whichutilizes the reference image and the image obtained in the simulationrepair part, and estimates second images of second transfer patternsobtained by transferring the images onto a substrate by a secondlithography process, wherein the second lithography process is the sameor more advanced than the first lithography process; and a secondcomparison part which compares the second images with each other andconfirms whether or not the defect is eliminated by the simulationrepair.
 2. A defect estimation method for estimating a defect on a maskused in a defect estimation device, the defect estimation methodcomprising: obtaining an optical image of a pattern formed on a mask anda reference image of said pattern using an optical image acquisitionpart; simulating first pattern images respectively corresponding totransferring the optical and reference images of the pattern to asubstrate using a simulation part; comparing the first pattern imagesimulated from the optical image and the first pattern image simulatedfrom the reference image with each other using a first comparison part;detecting defects in the first pattern image simulated from the opticalimage when a difference exceeds at least one of a plurality of thresholdvalues; simulating repair of the optical image of the pattern at aportion determined as defective by the defect detection using asimulation repair part; simulating second pattern images respectivelyfrom a repaired optical image and the reference image; comparing thesecond pattern images and the reference image with each other using asecond comparison part; and making confirmation whether or not thedefect is eliminated.
 3. An inspection device, which irradiates light toa mask formed with a pattern, forming an image of the mask on an imagesensor through an optical system and determines the presence of adefect, comprising: a first acquiring part which obtains a referenceimage and an optical image of a pattern formed on a mask; a firstestimation part which utilizes the images obtained in the firstacquiring part, and estimates first images of first transfer patternsobtained by transferring the optical and reference images onto asubstrate by a first lithography process; a first comparison part whichcompares the first images with each other and when a difference exceedsat least one of plurality of threshold values, determines that there isa defect in the optical image of the pattern formed on the mask; asimulation repair part which simulates a repair to the optical image ofthe pattern at a portion determined as defective by the first comparisonpart; and a second estimation part which utilizes the reference imageand the image obtained in the simulation repair part, and estimatessecond images of second transfer patterns obtained by transferring thereference image and the image obtained in the simulation repair partonto a substrate by a second lithography process, wherein the secondlithography process is the same as or more advanced than the firstlithographic process; and a second comparison part which compares thesecond images with each other and confirms whether or not the defect iseliminated by the simulation repair.